Thermal conductance between water and nm-thick WS<sub>2</sub>: extremely localized probing using nanosecond energy transport state-resolved Raman

Zobeiri, Hamidreza; Hunter, Nicholas; Wang, Ridong; Liu, Xinman; Tan, Hong; Xu, Shen; Wang, Xinwei

doi:10.1039/d0na00844c

Cited by 11 publications

(9 citation statements)

References 67 publications

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“…Finally, we benchmark the results by comparing the interfacial thermal conductance in hBN-encapsulated vdW heterostructures and other structures within a temperature range between 295 and 450 K [29,31,32,[35][36][37][38][39][40][41][42] (Figure 5). Apparently, the interfacial thermal conductance in hBN/MX 2 /hBN vdW heterostructures in the vertical direction is significantly higher than MX 2 with other materials.…”

Section: Computational Validationmentioning

confidence: 99%

“…Thermal modeling can then be used to extract the thermal conductivity and interfacial thermal conductance from the measurement results. We have found the interfacial thermal conductance in the hBN/MX 2 /hBN vdW heterostructure is 74 ± 25 MW m −2 K −1 , which is significantly higher than the thermal conductance between MX 2 and other materials or structures, [29,31,32,[34][35][36][37][38][39][40][41][42] suggesting only the fully hBN-encapsulated structure offers superior heat conduction compared to other structures. To validate our experimental discoveries, control experiments of MX 2 on hBN and MX 2 on substrates are performed (Figure 1B).…”

Section: Introductionmentioning

confidence: 99%

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Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics

Liu

et al. 2023

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Heat dissipation is a major limitation of high‐performance electronics. This is especially important in emerging nanoelectronic devices consisting of ultra‐thin layers, heterostructures, and interfaces, where enhancement in thermal transport is highly desired. Here, ultra‐high interfacial thermal conductance in encapsulated van der Waals (vdW) heterostructures with single‐layer transition metal dichalcogenides MX2 (MoS2, WSe2, WS2) sandwiched between two hexagonal boron nitride (hBN) layers is reported. Through Raman spectroscopic measurements of suspended and substrate‐supported hBN/MX2/hBN heterostructures with varying laser power and temperature, the out‐of‐plane interfacial thermal conductance in the vertical stack is calibrated. The measured interfacial thermal conductance between MX2 and hBN reaches 74 ± 25 MW m−2 K−1, which is at least ten times higher than the interfacial thermal conductance of MX2 in non‐encapsulation structures. Molecular dynamics (MD) calculations verify and explain the experimental results, suggesting a full encapsulation by hBN layers is accounting for the high interfacial conductance. This ultra‐high interfacial thermal conductance is attributed to the double heat transfer pathways and the clean and tight vdW interface between two crystalline 2D materials. The findings in this study reveal new thermal transport mechanisms in hBN/MX2/hBN structures and shed light on building novel hBN‐encapsulated nanoelectronic devices with enhanced thermal management.

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Section: Computational Validationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics

Liu

et al. 2023

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“…Thin films are placed over a 5 µm radius hole to create a suspended region. More details of this process and the hole structure can be found in our previous works [17,22]. Figures S1(a) and (b) (available online at stacks.iop.org/IJEM/4/035201/mmedia) show the atomic force microscopy (AFM) images of these prepared samples.…”

Section: Discovery Of Universal Parameter For High Sensitivity Therma...mentioning

confidence: 99%

“…For instance, laser absorption could vary a lot due to the optical properties variation of unknown samples. An energy transport state-resolved Raman (ET-Raman) technique was developed by Wang's group to overcome the drawbacks of SS Raman by generating steady and transient energy transport states and measuring the Raman shift power coefficient (dω/dP) under each of these states [12][13][14][15][16][17]. By normalizing the dω/dP under transient state with its counterpart under SS, a normalized Raman shift power coefficient (Θ) is determined, which is a function of thermal properties of the 2D material.…”

Section: Introductionmentioning

confidence: 99%

Robust and high-sensitivity thermal probing at the nanoscale based on resonance Raman ratio (R3)

Zobeiri

Hunter

et al. 2022

Int. J. Extrem. Manuf.

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Raman spectroscopy-based temperature sensing usually tracks the change of Raman wavenumber, linewidth and intensity, and has found very broad applications in characterizing the energy and charge transport in nanomaterials over the last decade. The temperature coefficients of these Raman properties are highly material-dependent, and are subjected to local optical scattering influence. As a result, Raman-based temperature sensing usually suffers quite large uncertainties and has low sensitivity. Here, a novel method based on dual resonance Raman phenomenon is developed to precisely measure the absolute temperature rise of nanomaterial (nm WS2 film in this work) from 170 to 470 K. A 532 nm laser (2.33 eV photon energy) is used to conduct the Raman experiment. Its photon energy is very close to the excitonic transition energy of WS2 at temperatures close to room temperature. A parameter, termed resonance Raman ratio (R3) Ω=IA1g /IE2g is introduced to combine the temperature effects on resonance Raman scattering for the A1g and E2g modes. Ω has a change of more than two orders of magnitude from 177 to 477 K, and such change is independent of film thickness and local optical scattering. It is shown that when Ω is varied by 1%, the temperature probing sensitivity is 0.42 K and 1.16 K at low and high temperatures, respectively. Based on Ω, the in-plane thermal conductivity (k) of a ~25 nm-thick suspended WS2 film is measured using our energy transport state-resolved Raman (ET-Raman). k is found decreasing from 50.0 to 20.0 Wm-1K-1 when temperature increases from 170 to 470 K. This agrees with previous experimental and theoretical results and the measurement data using our FET-Raman. The R3 technique provides a very robust and high-sensitivity method for temperature probing of nanomaterials and will have broad applications in nanoscale thermal transport characterization, non-destructive evaluation, and manufacturing monitoring.

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“…The differentiated energy transport states facilitate the extraction of thermal property information. Our previous works have employed various combinations of CW, nanosecond, and picosecond lasers to measure a range of nanomaterial thermal properties such as the thermal conductance between water and nm-thick WS2 and the nonequilibrium temperature distribution of optical and acoustic phonons in 2D materials after laser irradiation (MoS2, MoSe2, and graphene paper) [20][21][22][23].…”

Section: Chapter 1 Introduction 11 Effect Of Time and Spatial Domains...mentioning

confidence: 99%

Interfacial thermal conductance and non-equilibrium Phonon transport of 2D materials

Hunter

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Thermal conductance between water and nm-thick WS₂: extremely localized probing using nanosecond energy transport state-resolved Raman

Abstract: Liquid-solid interface energy transport has been a long-time research topic. Past research mostly focused on theoretical study while there are only a handful of experiment work because of the extreme...

Cited by 11 publications

References 67 publications

Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics

Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics

Robust and high-sensitivity thermal probing at the nanoscale based on resonance Raman ratio (R3)

Interfacial thermal conductance and non-equilibrium Phonon transport of 2D materials

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Thermal conductance between water and nm-thick WS2: extremely localized probing using nanosecond energy transport state-resolved Raman

Abstract: Liquid-solid interface energy transport has been a long-time research topic. Past research mostly focused on theoretical study while there are only a handful of experiment work because of the extreme...

Cited by 11 publications

References 67 publications

Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics

Ultra‐High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics

Robust and high-sensitivity thermal probing at the nanoscale based on resonance Raman ratio (R3)

Interfacial thermal conductance and non-equilibrium Phonon transport of 2D materials

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Thermal conductance between water and nm-thick WS₂: extremely localized probing using nanosecond energy transport state-resolved Raman