Thermal conductance of superlattice junctions

Lu, Simon; McGaughey, Alan J. H.

doi:10.1063/1.4918591

Cited by 12 publications

(10 citation statements)

References 44 publications

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“…This is consistent with the findings in Ref. 46, where it is demonstrated that the thermal circuit model underpredicts the thermal conductance of LJ-based crystalline SL junctions that are confined between two leads.…”

Section: Resultssupporting

confidence: 93%

Kapitza resistance and the thermal conductivity of amorphous superlattices

Giri

Hopkins

Wessel

et al. 2015

Journal of Applied Physics

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We report on the thermal conductivities of amorphous Stillinger-Weber and Lennard-Jones superlattices as determined by non-equilibrium molecular dynamics simulations. Thermal conductivities decrease with increasing interface density, demonstrating that interfaces contribute a nonnegligible thermal resistance. Interestingly, Kapitza resistances at interfaces between amorphous materials are lower than those at interfaces between the corresponding crystalline materials. We find that Kapitza resistances within the Stillinger-Webber based Si/Ge amorphous superlattices are not a function of interface density, counter to what has been observed in crystalline superlattices. Furthermore, the widely used thermal circuit model is able to correctly predict the interfacial resistance within the Stillinger-Weber based amorphous superlattices. However, we show that the applicability of this widely used thermal circuit model is invalid for Lennard-Jones based amorphous superlattices, suggesting that the assumptions made in the model do not hold for these systems. V

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Section: Resultssupporting

confidence: 93%

Kapitza resistance and the thermal conductivity of amorphous superlattices

Giri

Hopkins

Wessel

et al. 2015

Journal of Applied Physics

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“…This artificially modified mass method has been widely used to study interfacial thermal resistance. [ 74–76 ]…”

Section: Resultsmentioning

confidence: 99%

“…This artificially modified mass method has been widely used to study interfacial thermal resistance. [74][75][76] The temperature profile of the regular-"heavy" mass-mismatched heterostructure is shown in Figure 3. Importantly, it is worth noting that there is pronounced temperature jump across the interface, which are 19.59 K (positive thermal bias) and 19.94 K (negative thermal bias) for armchair mass-mismatched heterostructure, and 20.96 K (positive thermal bias), 20.62 K (negative thermal bias) for zigzag BP mass-mismatched heterostructure, respectively.…”

Section: Comparative Study With the Mass-mismatched Bp Junctionmentioning

confidence: 99%

Remarkable Reduction of Interfacial Thermal Resistance in Nanophononic Heterostructures

Ren

Liu

Chen

et al. 2020

Adv Funct Materials

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This work investigates interfacial thermal transport in phononic-mismatched heterostructures that consists of pristine black phosphorene and its phononic crystal. It is found that the presence of the sub-periodic structure results in reduced thermal conductivity in phononic crystals. As opposed to intuitive expectations, a slight temperature jump is observed at the interface of nanophononic heterostructures, which is only about 10% of that at conventional interfaces consisting of dissimilar materials. Consequently, contact thermal conductance in the nanophononic heterostructure is 10−30 times higher than that of mass-mismatched interfaces in a comparative study. Moreover, in contrast to conventional heterostructures achieved by interfacing dissimilar materials, weak temperature dependence is observed in interfacial thermal conductance, and thermal rectification is sharply suppressed. These phenomena are well explained based on lattice dynamic insights. This work not only enhances the understanding of the fundamental physics of phonons transport across interface, but also facilitates the possible spectrum of application ranges from thermoelectrics, thermal management, to thermal cloak.

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“…Therefore, it is interesting to asses to what extent subsequent DWs behave like independent scattering centers with resistances that barely sum up, a sound assumption in a purely diffusive transport regime. 31 For this reason, we next study the thermal conduction in systems with two DWs. In particular, we consider two cases of DW pairs: in one case the spacing between them is 1.5 nm, in the other 4 nm.…”

mentioning

confidence: 99%

A phononic switch based on ferroelectric domain walls

et al. 2017

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The ease with which domain walls (DWs) in ferroelectric materials can be written and erased provides a versatile way to dynamically modulate heat fluxes. In this work we evaluate the thermal boundary resistance (TBR) of 180$^{\circ}$ DWs in prototype ferroelectric perovskite PbTiO$_3$ within the numerical formalisms of nonequilibrium molecular dynamics and nonequilibrium Green's functions. An excellent agreement is obtained for the TBR of an isolated DW derived from both approaches, which reveals the harmonic character of the phonon-DW scattering mechanism. The thermal resistance of the ferroelectric material is shown to increase up to around 20%, in the system sizes here considered, due to the presence of a single DW, and larger resistances can be attained by incorporation of more DWs along the path of thermal flux. These results, obtained at device operation temperatures, prove the viability of an electrically actuated phononic switch based on ferroelectric DWs

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Thermal conductance of superlattice junctions

Cited by 12 publications

References 44 publications

Kapitza resistance and the thermal conductivity of amorphous superlattices

Kapitza resistance and the thermal conductivity of amorphous superlattices

Remarkable Reduction of Interfacial Thermal Resistance in Nanophononic Heterostructures

A phononic switch based on ferroelectric domain walls

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