Thermal conduction across a boron nitride and SiO₂interface

Abstract

The needs for efficient heat removal and superior thermal conduction in nano/micro devices have triggered tremendous studies in low-dimensional materials with high thermal conductivity. Hexagonal boron nitride (h-BN) is believed to be one of the candidates for thermal management and heat dissipation due to its novel physical properties, i.e. thermal conductor and electrical insulator. Here we reported interfacial thermal resistance between few-layer h-BN and its silicon oxide substrate using differential 3ω method. The measured interfacial thermal resistance is around ~1.

A Review of Experimental and Computational Advances in Thermal Boundary Conductance and Nanoscale Thermal Transport across Solid Interfaces

“…Similarly, Yalon et al reported a lower value of ≈15 MW m −2 K −1 for MoS 2 with AlN and SiO 2 at room temperature, using Raman thermometry with laser‐induced heating. A comparatively higher conductance of 62.5 MW m −2 K −1 has been reported for metal‐coated single‐layer boron nitride on SiO 2 substrate via a 3ω technique . It was also shown that increasing the number of boron nitride layers (to a total thickness of 12.8 nm) led to a reduction of as much as ≈50% in the measured h K .…”

“…A comparatively higher conductance of 62.5 MW m −2 K −1 has been reported for metal-coated single-layer boron nitride on SiO 2 substrate via a 3ω technique. [168] It was also shown that increasing the number of boron nitride layers (to a total thickness of 12.8 nm) led to a reduction of as much as ≈50% in the measured h K . [168] Tungsten diselenide on SiO 2 substrate showed similar thickness dependent behavior as reported by Behranginia et al [165] via an electronic-heating Raman-probe platform.…”

“…[168] It was also shown that increasing the number of boron nitride layers (to a total thickness of 12.8 nm) led to a reduction of as much as ≈50% in the measured h K . [168] Tungsten diselenide on SiO 2 substrate showed similar thickness dependent behavior as reported by Behranginia et al [165] via an electronic-heating Raman-probe platform. However, the conductance was shown to peak for 3 to 4 layers of WSe 2 with a value of 32 MW m −2 K −1 .…”

Thermal Boundary Conductance and Phonon Transmission in Hexagonal Boron Nitride/Graphene Heterostructures

“…The TBC G=SiO 2 and TBC hÀBN=SiO2 values were previously reported for SLG [%83 (þ6.2/À5.5) MW m À2 K À1 ] [88] and monolayer h-BN [%63 (þ28/À15) MW m À2 K À1 ] [89] using the 3ω technique. Using these values, the resulting TBC Ti=G and TBC Ti=hÀBN are 48.5 (þ8.5/À14.3) and 73.3 (þ10.7/À2.9) MW m À2 K À1 , respectively.…”

“…Error bars were calculated using an MC method . G/SiO 2 and h‐BN/SiO 2 data taken from previous studies, respectively. Ti/G, Ti/h‐BN, and h‐BN/G TBC values estimated using series resistance approximation.…”