Thermal conduction normal to diamond-silicon boundaries

Goodson, Kenneth E.; Käding, O. W.; Rösner, Malte; Zachai, R.

doi:10.1063/1.113625

Cited by 37 publications

(17 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Some of these8-19.21.22 were included by Goodson et al in fig. 4 of ref 19. We have replotted these data in Fig.…”

Section: Fine-grained Filmsmentioning

confidence: 91%

Thermal Conductivity of Diamond Films: 0.5 μm to 0.5 mm

Graebner¹

1998

Israel Journal of Chemistry

View full text Add to dashboard Cite

Abstract.A review of the thermal properties of chemical-vapor-deposited (CVD) diamond ranging in thickness from 0.5 Fm to 0.5 mm is presented. The typical columnar microstructure of the material has a strong influence on the thermal properties, causing a steep gradient in both the in-plane (5,) and normal (K,) conductivities, as well as considerable anisotropy. Data for 5, from above room temperature down to liquid helium temperatures for high-quality thick samples has revealed several types of phonon scattering centers preferentially located along grain boundaries. This model of dirty grain boundaries provides a framework for understanding the conductivity of thinner, lower-quality material. The general difficulty of identifying microscopic sources of thermal resistance in CVD diamond is discussed, especially in view of the tendency for the concentrations of many types of defects to be highly correlated with each other. Finally, recent work on interfacial resistance between CVD diamond and Si substrate shows that the columnar microstructure has a strong influence for high-quality films as thin as 2 pm.

show abstract

“…Some of these8-19.21.22 were included by Goodson et al in fig. 4 of ref 19. We have replotted these data in Fig.…”

Section: Fine-grained Filmsmentioning

confidence: 91%

Thermal Conductivity of Diamond Films: 0.5 μm to 0.5 mm

Graebner¹

1998

Israel Journal of Chemistry

View full text Add to dashboard Cite

show abstract

“…For instance, the results of Graebner et al [8] indicate a strong dependence on the layer thickness for both components of k, with an anisotropy k vertical /k lateral ≈ 2 (for thicknesses in the range of 30-100 µm) and values eventually reaching the natural diamond ones in both directions for film thicknesses above 200 µm. Evidence of strong thickness dependence of the thermal conductivity was observed also in thinner, columnar-structured NCD films by Philip et al [7], who reported an increase in the thermal conductivity from 530 to 1370 Wm -1 K -1 , when the film thickness increased from 1.6 µm to 3.6 µm.…”

Section: Introductionmentioning

confidence: 99%

“…Scattering at the grain boundaries is the main phonon scattering mechanism [8,9] in such polycrystalline material. The anisotropy in the shape of the grains, with an out-of-plane (i.e.…”

Section: Introductionmentioning

confidence: 99%

Thermal analysis of submicron nanocrystalline diamond films

Rossi

Alomari

Zhang

et al. 2013

Diamond and Related Materials

View full text Add to dashboard Cite

The thermal properties of sub-µm nanocrystalline diamond films in the range 0.37-1.1 µm grown by hot filament CVD, initiated by bias enhanced nucleation on a nm-thin Si-nucleation layer on various substrates, have been characterized by scanning thermal microscopy. After coalescence, the films have been outgrown with a columnar grain structure. The results indicate that even in the sub-µm range, the average thermal conductivity of these NCD films approaches 400 Wm -1 K -1 . By patterning the films into membranes and step-like mesas, the lateral and the vertical component of the thermal conductivity, k lateral and k vertical , have been isolated showing an anisotropy between vertical conduction along the columns, with k vertical ≈1000 Wm -1 K -1 , and a weaker lateral conduction across the columns, with k lateral ≈ 300 Wm -1 K -1 .

show abstract

“…The high-temperature gradient results in high thermal stresses, which may cause de-bonding of the interface, thus reducing the function and reliability of the systems. A better understanding of temperature and thermal flux distributions in the bonded media is critical in many applications.In the literature, numerous studies have been reported on the investigation of thermal conduction in particle composites and multi-layered media [1][2][3][4][5][6][7][8][9][10]. To the authors' best knowledge, the thermal behavior of bi-layer materials with an interface inclusion has not been investigated for finite media.…”

mentioning

confidence: 96%

Thermal conduction in bi-layer materials with an interfacial inclusion

Wang

Han

2010

Philosophical Magazine Letters

View full text Add to dashboard Cite

We establish an analytical model for a thermal inclusion in bi-layer materials. The inclusion is considered as either an elliptic filler of finite thermal conductivity or a crack of ideal thermal insulation. Unlike most existing studies, this article focuses on bonded media of finite size in both their height and the length directions. The temperature field is formulated by a singular integral equation method. The effects of inclusion size and interfacial cracking on the effective thermal conductivity of the medium are studied. In addition, the crack tip thermal flux intensity factors are also given as they are not available in the open literature.Multi-layered materials are widely used in engineering applications such as thermal barrier coatings, oxidation/corrosion resistance coatings, magnetic storage devices, electronic packaging and solid-oxide fuel cells. The temperature gradient becomes high at the interfaces because of the difference in the thermal and mechanical properties between bonded layers. The high-temperature gradient results in high thermal stresses, which may cause de-bonding of the interface, thus reducing the function and reliability of the systems. A better understanding of temperature and thermal flux distributions in the bonded media is critical in many applications.In the literature, numerous studies have been reported on the investigation of thermal conduction in particle composites and multi-layered media [1][2][3][4][5][6][7][8][9][10]. To the authors' best knowledge, the thermal behavior of bi-layer materials with an interface inclusion has not been investigated for finite media. Motivated by this consideration, this article focuses on a bonded medium of finite size in its length and height directions. Figure 1 shows the material system occupying Àh x h, Àc5y5c, À15z51. The bonded two layers are of the same thickness c and same length h. There is an interface inclusion at the geometric center of the medium. It is assumed that the maximum height of the inclusion 0 is much smaller than its length 2a. The upper surface of the medium is subjected to a temperature T þ and the lower surface of the medium is subjected to a temperature T À . There is no internal heat source inside the medium. In isotropic materials, the thermal fluxes in the x and y directions

show abstract

Thermal conduction normal to diamond-silicon boundaries

Cited by 37 publications

References 13 publications

Thermal Conductivity of Diamond Films: 0.5 μm to 0.5 mm

Thermal Conductivity of Diamond Films: 0.5 μm to 0.5 mm

Thermal analysis of submicron nanocrystalline diamond films

Thermal conduction in bi-layer materials with an interfacial inclusion

Contact Info

Product

Resources

About