Thermal conductivity and sound velocity measurements of plasma enhanced chemical vapor deposited a-SiC:H thin films

Hondongwa, Donald; Olasov, Lauren R.; Daly, Brian C.; King, Sean W.; Bielefeld, J.

doi:10.1016/j.tsf.2011.05.014

Cited by 24 publications

(17 citation statements)

References 28 publications

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“…[123][124][125][126][127][128] The low-k ILD and DB material properties most focused on from this viewpoint are Young's modulus and hardness as determined by nanoindentation. 129,130 Due to limitations in spatial resolution and substrate effects that have become increasingly significant as target film thicknesses decrease below 100 nm, 9,131 a number of alternative techniques have recently attracted attention such as contact resonance-atomic force microcopy (CR-AFM) [132][133][134] and bulge testing 135,136 as well as non-contact optical techniques such as picosecond laser ultrasonics (PLU), [137][138][139][140] Brillouin light scattering (BLS), [141][142][143][144][145][146] and surface acoustic wave spectroscopy (SAWS) 146,147 . However despite the extreme emphasis on measuring Young's modulus for low-k materials, the author is unaware of any established critical thresholds for these properties in either low-k ILD or DBs.…”

Section: -122mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Section: -122mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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“…This assumption is supported by the fact that the speed of sound in an amorphous material is shown to be somewhat smaller than that in the same type of crystalline material. 19,20 Thus, a substantial slowing of the speed of sound would result in a phase shift of CAP spectra of the implanted specimen to the right with respect to the spectra of the unimplanted specimen. However, we observe a phase shift in the opposite direction.…”

mentioning

confidence: 99%

Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

et al. 2016

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Silicon carbide (SiC) is a promising material for new generation electronics including high power/high temperature devices and advanced optical applications such as room temperature spintronics and quantum computing. Both types of applications require the control of defects particularly those created by ion bombardment. In this work, modification of optical constants of 4H-SiC due to hydrogen implantation at 180 keV and at fluences ranging from 1014 to 1016 cm−2 is reported. The depth dependence of the modified optical constants was extracted from coherent acoustic phonon spectra. Implanted spectra show a strong dependence of the 4H-SiC complex refractive index depth profile on H+ fluence. These studies provide basic insight into the dependence of optical properties of 4H silicon carbide on defect densities created by ion implantation, which is of relevance to the fabrication of SiC-based photonic and optoelectronic devices.

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“…The thermal conductivities changed from 0.65 W·m and processing method [11,[14][15][16]. But in fact, the main factor to influence the thermal conductivities is the porosity of the samples.…”

Section: Thermal Conductivitymentioning

confidence: 99%

Thermal Conductivity and Microstructure Properties of Porous SiC Ceramic Derived from Silicon Carbide Powder

Wu¹,

Ma²,

Chen³

et al. 2013

NJGC

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Porous SiC ceramic were prepared with silicon carbide powder as the aggregate, silicone resin as the binder and pore agent by the process of mixing, iso-static pressure molding, and calcination. The mechanical properties and microstructures of the samples were characterized with a universal testing machine, X-ray diffraction, scanning electron microscope, and mercury injection. Two main factors, molding pressures and silicone resin mass ratio were studied in the experiments. The thermal conductivity of the samples was tested. The compressive strength was up to 19.4 MPa, and the porosities up to 30%. The thermal conductivities, mainly influenced by porosities, increased from 0.68 W·m ·K−1 with the porosity decreasing from 41.96% to 31.30%.

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Thermal conductivity and sound velocity measurements of plasma enhanced chemical vapor deposited a-SiC:H thin films

Cited by 24 publications

References 28 publications

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons

Thermal Conductivity and Microstructure Properties of Porous SiC Ceramic Derived from Silicon Carbide Powder

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