Thermal Conductivity Behaviour of Al/Diamond and Ag/Diamond Composites in the Temperature Range 4 K &amp;lt; T &amp;lt; 293 K

Edtmaier, Christian; Bauer, E.; Tako, Zeze Serge; Segl, Jakob

doi:10.4028/www.scientific.net/msf.825-826.197

Cited by 4 publications

(2 citation statements)

References 12 publications

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“…Note, that a minimum amount of Al4C3 at the diamond-metal interface appears to be a basic necessity to create interfacial bonding and thus thermal transport across the interface, as composite thermal conductivity will be low when interfacial carbides are absent [6]. Furthermore, it was also previously shown [7][8][9], that surface termination plays another important role in bonding strength and thermal transport between the constituents. It appeared that oxygenated surfaces could result in superior thermal boundary conductance between diamonds and metallic matrices compared to systems with hydrogenated diamond surfaces.…”

Section: Introductionmentioning

confidence: 89%

Effect of Processing Conditions on Bonding Strength at Al(Si)/Diamond Interfaces

Edtmaier

Segl

Koos³

et al. 2019

KEM

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Understanding thermos-physical properties of MMCs includes considering interfacial processes and interactions between the constituents in MMCs. In this context, interfacial bonding is of vital interest for a deeper understanding of composites. Neutron diffraction experiments on Al/diamond composites were performed and reconciled with their thermo-physical properties and quantification of interfacial carbides formation. To create different interfacial conditions both, the contact time during processing the MMCs by liquid metal infiltration and the nominal composition of the matrix were changed, thus creating different amounts of interfacial Al4C3 carbides. Neutron diffraction showed the increase in contact time and the addition of Si to Al both increase the bonding strength, although going with a significant decrease of the composite`s thermal conductivity.

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Section: Introductionmentioning

confidence: 89%

Effect of Processing Conditions on Bonding Strength at Al(Si)/Diamond Interfaces

Edtmaier

Segl

Koos³

et al. 2019

KEM

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“…The metal/ diamond composites especially were identified to achieve very high thermal conductivity [5]. Aluminum/ diamond composites achieve around 500 to 760 W/(mK) [6,7], copper/ diamond composites around 680 W/(mK) [8] and silver/ diamond composites up to 970 W/(mK) [7,9].…”

Section: Introductionmentioning

confidence: 99%

Silver/Diamond Composite Material - Powder Metallurgical Route and Thermo-Physical Properties

Hutsch

Schubert

Weißgärber

et al. 2017

KEM

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To meet the need of high-performance thermal management materials in the field of electronic applications, heat sink materials reinforced with synthetic diamonds have been prepared via powder metallurgy. A matrix of a silver alloy with a silicon content of 0.45 wt.% was chosen out of the prediction of the thickness of a final carbide layer of about 180 nm. The volume content of the diamonds and the diamond size were kept constant. The mixed powders were consolidated by Spark Plasma Sintering (SPS) using different sintering temperatures between 800 and 870 °C with a holding time of 30 min. The maximum thermal conductivity of 680 W/(mK) measured at room temperature and 620 W/(mK) at 275 °C was obtained at 810 °C sintering temperature. The degradation of the most promising sample after one thermal cycle up to 275 °C was determined below 1 percent of the value after sintering.

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Thermal conductance of interfaces between titanium nitride and group IV semiconductors at high temperatures

Khan,

Shi,

Feser

et al. 2024

Applied Physics Letters

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Measuring the temperature dependence of material properties is a standard method for better understanding the microscopic origins for that property. Surprisingly, only a few experimental studies of thermal boundary conductance at high temperatures exist. This lack of high temperature data makes it difficult to evaluate competing theories for how inelastic processes contribute to thermal conductance. To address this, we report time domain thermoreflectance measurements of the thermal boundary conductance for TiN on diamond, silicon-carbide, silicon, and germanium between 120 and 1000 K. In all systems, the interface conductance increases monotonically without stagnating at higher temperatures. For TiN/SiC interfaces, G ranges from 330 to 1000 MW/m2-K, with a room temperature conductance of 750 MW/m2-K. The interface conductance for TiN/diamond ranges from 140 to 950 MW/m2-K. Notably, for all four interfacial systems, the conductance continues to increase with temperature even after all phonon modes in the vibrationally soft material are thermally excited. This observation suggests that inelastic processes are significant contributors to the thermal conductance in all four interfacial systems, regardless of whether the materials forming the interface are vibrationally similar or dissimilar. Our study fills a notable gap in the literature for how interfacial conductance evolves at high temperatures and tests burgeoning theories for the role of inelastic processes in interfacial thermal transport.

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Thermal Conductivity Behaviour of Al/Diamond and Ag/Diamond Composites in the Temperature Range 4 K < T < 293 K

Cited by 4 publications

References 12 publications

Effect of Processing Conditions on Bonding Strength at Al(Si)/Diamond Interfaces

Effect of Processing Conditions on Bonding Strength at Al(Si)/Diamond Interfaces

Silver/Diamond Composite Material - Powder Metallurgical Route and Thermo-Physical Properties

Thermal conductance of interfaces between titanium nitride and group IV semiconductors at high temperatures

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