The application of machine learning in materials science has yielded several benefits, including the prediction of physical properties and the improvement of experimental efficiency. However, with complex models, such as convolutional neural networks (CNN), learning has become a black box, from which no universal physical knowledge can be obtained. In this study, a highly accurate prediction of the electrical properties of polycrystalline semiconductor thin films is achieved by learning multichannel CNN models from electron backscattering diffraction (EBSD) data, that is band contrasts, grain boundaries, and inverse pole figures. In addition, it examines how the CNN model learned the correlation between the crystallinity, grain boundaries, crystallographic orientation, and carrier mobility by polarizing certain EBSD data and checking the predicted changes in carrier mobility. Physical parameters affecting carrier mobility can be extracted, which is challenging via human image recognition. The methods proposed in this study will not only enable the prediction of electrical properties from EBSD data for all materials but also will contribute to the discovery of complex physical phenomena beyond the limits of human analysis.