Thermal conductivity, heat capacity, and thermal diffusivity of selected commercial AlN substrates

Dinwiddie, Ralph B.; Whittaker, A.; Onn, David G.

doi:10.1007/bf00503175

Cited by 23 publications

(7 citation statements)

References 6 publications

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“…In addition, the SRL effective heat capacity is fitted to be 492 6 18 J kg À1 K À1 , located within the heat capacity of GaN (430 J kg À1 K À1 ) 23 and AlN (730 J kg À1 K À1 ). 31 As for the substrates (polycrystalline diamond, SiC, sapphire, and Si), as shown in Fig. 4(c), the measured thermal conductivity values are found to be comparable to the data measured by metal-transducer TTR and the reported values in the literature.…”

supporting

confidence: 83%

“…The analytical model describes the sample surface temperature which is affected by materials' thermal conductivity, density, specific heat capacity, thickness of each layer/material, and geometrical and temporal characteristics of both pump and probe lasers. In this work, the layer thickness (Table I), material's density and specific heat capacity (literature reported values [23][24][25][26][27][28][29][30][31][32] are given in Table II) were fixed. The pump laser spot shape was measured by imaging the reflected laser intensity distribution, having a Gaussian profile with a 50 lm FWHM.…”

mentioning

confidence: 99%

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Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers

Yuan

Pomeroy

Kuball

2018

Applied Physics Letters

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GaN devices integrated with dissimilar substrates have transformed electronic and optoelectronic applications. However, an effective thermal resistance (TBR eff) exists between the GaN layer and the dissimilar substrates typically, which can potentially cause a major heat transport bottleneck. A noninvasive method for monitoring the TBR eff of bare wafers is a key enabler for process monitoring and for the reduction of TBR eff through design optimization. The existing TBR eff measurement techniques require metal deposition on the sample surface. Here, we demonstrate a generic non-invasive transient thermoreflectance technique which does not require modification of the GaN surface and can be applied to any GaN-based wafers, regardless of the substrate material. Above-bandgap pump and probe lasers are used to avoid any interference caused by sub-surface reflections, ensuring that this technique strictly follows the fundamental principle of thermoreflectance-based methods. Several GaN wafers on common substrates (SiC, Si, diamond, and sapphire) are measured to assess the validity of this technique.

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supporting

confidence: 83%

mentioning

confidence: 99%

Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers

Yuan

Pomeroy

Kuball

2018

Applied Physics Letters

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“…Possibly, it is related with the conductivity properties of AlN. AlN is a substance with high thermal conductivity (the heat conduction coefficient of commercial AlN is in the range of 130−170 W/m K), much higher than that of γ-Al 2 O 3 (about 10 W/m K) . The addition of AlN to Ni/γ-Al 2 O 3 quickened heat transfer between catalyst particles.…”

Section: Resultsmentioning

confidence: 99%

“…AlN is a substance with good thermal stability and high thermal conductivity, 22 and the thermal conductivity of AlN is much higher than that of γ-Al 2 O 3 . Supports with high thermal conductivity benefit heat transfer within the catalyst beds and avoid overheating on the catalyst surfaces, which finally slow down the sintering of catalysts.…”

Section: Introductionmentioning

confidence: 99%

Physicochemical Properties of Ni/γ-Al₂O₃-AlN and Effects of AlN on Catalytic Performance of Ni/γ-Al₂O₃-AlN in Partial Oxidation of Methane

Liu

2010

J. Phys. Chem. C

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AlN, a substance usually used as a heat-resisting material due to its high-temperature stability and high thermal conductivity, was applied in partial oxidation of methane for modifying γ-Al 2 O 3 support. γ-Al 2 O 3 -AlN, prepared by mechanically mixing γ-Al 2 O 3 and AlN, was used as support of a Ni-based catalyst. The physicochemical properties of Ni/γ-Al 2 O 3 -AlN and the effects of AlN on the catalytic performance of Ni/γ-Al 2 O 3 -AlN were studied in detail by means of X-ray diffraction, temperature-programmed reduction, Brunauer-Emmett-Teller method, NH 3 -temperature-programmed desorption, thermogravimetric analysis, X-ray fluorescence spectrometer, and H 2 -chemisorption techniques. The results showed that Ni/γ-Al 2 O 3 -AlN exhibited high methane conversion and high selectivities to CO and H 2 . The addition of AlN, a substance with higher thermal conductivity than γ-Al 2 O 3 , leads to the higher thermal conductivity of Ni/γ-Al 2 O 3 -AlN than Ni/γ-Al 2 O 3 , and for this reason, after the same time of reaction, the Ni particles on Ni/γ-Al 2 O 3 -AlN showed a lower degree of sintering. Besides, as compared with γ-Al 2 O 3 , AlN is basic rather than acidic, that is, the addition of AlN to Ni/γ-Al 2 O 3 made the acidic sites on Ni/γ-Al 2 O 3 -AlN reduce greatly, which finally resulted in a smaller amount of carbon deposited on Ni/γ-Al 2 O 3 -AlN.

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“…10 Aluminum nitride features the unique combination of being an electrical insulator and possessing a high thermal conductivity of up to 180 W m −1 K −1 for typical sintered parts of AlN. 11,12 The drawback of AlN-being hydrolytically instable-can be compensated by a passivation of AlN powder with phosphate species like orthophosphoric acid or an Al(H 2 PO 4 ) 3 solution prior to processing. [13][14][15] This passivated AlN powder can then be conventionally processed in aqueous dispersions.…”

Section: Introductionmentioning

confidence: 99%

Reticulated open‐cellular aluminum nitride ceramic foams: Effect of sintering aids on microstructural, thermal, and mechanical properties

Betke

Mendoza

Scheffler

2022

Int J Applied Ceramic Tech

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Open‐celled aluminum nitride ceramic foams were prepared by the polymer sponge replication technique involving aqueous dispersions of passivated AlN. The amount of the Y2O3 and Dy2O3 as sintering aid was varied, and the effects on the densification, microstructure formation, phase composition, and finally, the thermal conductivity were investigated. A typical thermal conductivity of 1.1 W m−1 K−1 was determined for foams at a porosity level of 94.3 vol.%, on average. This measured foam thermal conductivity was subsequently modeled using different porosity ↔ thermal conductivity relations considering the different hierarchical levels of porosity in these foams. From these models, the thermal conductivity of the bulk AlN strut material was determined, correlated with the strut microstructure and the phase composition, and compared to literature data.

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Thermal conductivity, heat capacity, and thermal diffusivity of selected commercial AlN substrates

Cited by 23 publications

References 6 publications

Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers

Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers

Physicochemical Properties of Ni/γ-Al₂O₃-AlN and Effects of AlN on Catalytic Performance of Ni/γ-Al₂O₃-AlN in Partial Oxidation of Methane

Reticulated open‐cellular aluminum nitride ceramic foams: Effect of sintering aids on microstructural, thermal, and mechanical properties

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Thermal conductivity, heat capacity, and thermal diffusivity of selected commercial AlN substrates

Cited by 23 publications

References 6 publications

Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers

Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers

Physicochemical Properties of Ni/γ-Al2O3-AlN and Effects of AlN on Catalytic Performance of Ni/γ-Al2O3-AlN in Partial Oxidation of Methane

Reticulated open‐cellular aluminum nitride ceramic foams: Effect of sintering aids on microstructural, thermal, and mechanical properties

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Physicochemical Properties of Ni/γ-Al₂O₃-AlN and Effects of AlN on Catalytic Performance of Ni/γ-Al₂O₃-AlN in Partial Oxidation of Methane