The author analysed the effects of inhomogeneity in the measurements of thermoelectric and photothermoelectric power. Physical lumped circuit models have been used to simulate longitudinal and layered inhomogeneities commonly found in insulating semiconductors. The results indicated a marked difference between the measured thermoelectric power and that calculated from conductivity data for inhomogeneous samples. The measured values were always too small. A quantitative comparison between theory and experiment gave a very good correlation for longitudinal inhomogeneity found in a CdS single crystal. The effects of layered inhomogeneity were demonstrated in the case of surface absorption in a CdS-CdSe sample. The results thus seem to explain some of the anomalous effects frequently observed in the measurements of thermoelectric power in light-sensitive single crystals.