Thermal Conductivity Measurement of Molten Silicon by a Hot-Disk Method  in  Short-Duration Microgravity Environments

Nagai, Hiroki; Nakata, Yoshinori; Tsurue, Takashi; Minagawa, Hideki; Kamada, Keiji; Gustafsson, Stefan; Okutani, Takeshi

doi:10.1143/jjap.39.1405

Cited by 31 publications

(28 citation statements)

References 8 publications

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“…Thus, the Lorenz number presently obtained appears to be significant. : Nagai et al 2) : Yamamoto et al 5) : Kimura et al The results of molten germanium and silicon are found to be quite in agreement with L 0 in the temperature range investigated in this work. Thus, the principal mechanism for the thermal conduction of molten germanium and silicon may be represented by the simple electron transport.…”

supporting

confidence: 83%

“…For this purpose, the sufficiently reliable values of the thermal diffusivities and conductivities of molten germanium and silicon are strongly required. However, some reservations have been suggested on the available thermal diffusivity and conductivity values of molten germanium and silicon, [1][2][3][4][5][6] because of the experimental difficulties arising mainly from onset of convection, heat leakage to the container and mixed contributions of radiative and conductive heat transfer components during the measurement of the thermal diffusivity at high temperatures. On the other hand, the laser flash method 7) is widely employed as one of the most versatile techniques for measuring the thermal diffusivity of various materials.…”

Section: Introductionmentioning

confidence: 99%

“…Nishi, H. Shibata and H. Ohta than AE2:2 % for molten germanium and AE7:7 % for molten silicon. Nagai et al 2) measured the thermal conductivities of molten silicon by a hot-plate method. As shown in Fig.…”

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confidence: 99%

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Thermal Diffusivities and Conductivities of Molten Germanium and Silicon

2003

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Thermal diffusivity values of molten germanium and silicon were measured by a laser flash method. Simple but useful sample cell systems were developed to keep the molten germanium and silicon shape uniform for a given thickness. In the present experimental condition, it is necessary to consider the effect of not only the radiative heat loss but also the conductive heat loss at the interface between the molten sample and the cell material under the present experimental conditions. However, the computer simulation results suggest that the conductive heat loss is found to be negligibly small. The thermal diffusivity values of molten germanium and silicon are given in the following equations (unit: m 2 /s).

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confidence: 83%

Section: Introductionmentioning

confidence: 99%

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Thermal Diffusivities and Conductivities of Molten Germanium and Silicon

2003

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“…Thermal diffusivity was measured also by a laser flash method [7,24,54] and is converted into thermal conductivity using density ρ and mass heat capacity C mass p . Although transient hot-wire and hot-disk methods assure direct measurement of thermal conductivity, an insulating coating must be applied to prohibit electric current leakage from the wire to the melt, as well as corrosion of the wire by the melt [55,56]. The Insulating coating causes measurement error so that the measured thermal conductivity can be smaller than the correct value.…”

Section: Thermal Conductivitymentioning

confidence: 99%

“…15 Thermal conductivity, directly measured in various magnetic fields between 0.5 and 4 T[35] and estimated from thermal diffusivity and electrical conductivity[5,7,8,24,[52][53][54][55][56].…”

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confidence: 99%

Thermophysical Properties of Molten Silicon

Hibiya

Fukuyama

Tsukada

et al. 2008

Crystal Growth Technology

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IntroductionModern society features information processing on a large scale and is supported by information technologies, which require high-speed data processing and high-speed data transmission. From the viewpoint of materials science and engineering, this is supported by high-quality semiconductor crystals, produced from high-temperature melt processes, such as the Czochralski, the floating zone, Bridgman processes, and so on. In order to understand and control these high-temperature processes, computer modeling is one of the superior tools available. This shows us the physics of these processes and how to improve processes and products, as shown in Fig. 4.1 [1]. This has been made possible thanks to the year-by-year improvements in computer performance, and even turbulence flow can now be handled. In modeling equations for continuity, momentum, energy and the Maxwell equation are solved simultaneously. In order to calculate temperature, flow and pressure fields of a high-temperature process, the thermophysical properties of the molten state in particular are indispensable. A survey was carried out on the required thermophysical properties for silicon crystal growth processes and on thermophysical properties actually employed in modeling in Japan: see Fig. 4.2 and Table 4.1 [2][3][4]. Table 4.1 shows thermophysical properties employed in 44 papers. The scatter of the data is rather large; particularly for the temperature coefficient of surface tension, the difference is one order of magnitude. Historically, Glazov et al. [5] reviewed thermophysical properties of molten semiconductors not only for molten silicon but also for other compound molten semiconductors. However, modern society requires the development of new measurement techniques and improvements in the accuracy and precision of data. Iida and Guthrie [6] overviewed thermophysical properties of molten metals and methods for measurements; this is a good textbook for thermophysical property measurement of high-temperature melts. Figure 4.2 shows that thermal conductivity, specific heat capacity and surface tension are urgently required. Although thermal conductivity is required to calculate heat balance at the solid/liquid interface during crystal growth and is important to Crystal Growth Technology. Edited by Hans J. Scheel and Peter Capper

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Gas Hydrate Formation and Its Thermal Conductivity Measurement

Huang

Fan

Liang

et al. 2005

Chinese J. Geophys.

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An experiment has been constructed to measure thermal conductivity of combination gas hydrate and combination gas hydrate‐sand mixtures. The combination gas hydrate formed from the combination gas (methane 90.01 volume %, ethane 5.03 volume % and propane 4.96 volume %) and 0.971 mol/m3 aqueous sodium dodecyl sulfate (SDS) solution has a thermal conductivity around 0.55 W/(m·K) from –10°C to 5°C at 6.6MPa. The hydrate's thermal conductivity shows glass‐like dependence on temperature, i.e. it has a positive slope with temperature. However, the measured 1.2 W/(m·K) effective thermal conductivity (ETC) of combination gas hydrate‐bearing sand is significantly lower than that of tetrahydrofuran (THF) hydrate‐bearing sand (about 1.9 W/(m·K). This is because the hydrate formed with a SDS solution in sand at our laboratory has a “wall creeping” growth characteristic and consequently a large part of the pores were filled with free gas. In order to obtain good‐characteristic hydrate sample for measurement, this work advances a method to promote the reaction of SDS solution and gas. When the temperature vibrates from –10°C to 4°C, it is found the stagnated reaction reacts again in the zone of phase change temperature of water. And the surviving water could be consumed away after several vibration periods. The SDS's effects to the measurement are also discussed by experiments. It's indicated that the SDS concentration used in this work has a minor effect to the hydrate's thermal conductivity, and it only causes a deviation of ±1.5%.

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Thermal Conductivity Measurement of Molten Silicon by a Hot-Disk Method in Short-Duration Microgravity Environments

Cited by 31 publications

References 8 publications

Thermal Diffusivities and Conductivities of Molten Germanium and Silicon

Thermal Diffusivities and Conductivities of Molten Germanium and Silicon

Thermophysical Properties of Molten Silicon

Gas Hydrate Formation and Its Thermal Conductivity Measurement

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