Thermal Conductivity Measurement of Thermally-Oxidized SiO2 Films on a Silicon Wafer Using a Thermo-Reflectance Technique

Abstract

This paper describes the development of an advanced method to measure the normal-to-plane thermal conductivity of very-thin insulating films. In this method the metal film layer, which is deposited on thin insulating films, is Joule heated periodically and the ac-temperature response at the center of the metal film surface is measured by a thermo-reflectance technique. The one-dimensional thermal conduction equation of the three-layered system was solved analytically, and a quite simple and accurate approximate equation was derived. In this method, calibration factors of the thermo-reflectance coefficient were determined using the known thermal effusivity of the substrate. The present method was examined for thermally-oxidized SiO 2 films (1000-20 nm thick) on a silicon wafer. The present results of the thermal conductivity agree with those of VAMAS TWA23 within ±10%.

Measurement of Interfacial Thermal Resistance by Periodic Heating and a Thermo-Reflectance Technique

“…Furthermore, the analytical model reported in ref. 8) does not take into account the interfacial thermal resistance, and therefore lacks a convincing theoretical foundation for calculating it.…”

Thermal Conductivity Measurement of Tungsten Oxide Nanoscale Thin Films

“…Kato et al 9) have developed a two omega method to measure the thermal conductivity of the dielectric thin films. This method also deposits a stripe-shaped metal film on the dielectric thin film to serve as heater and thermometer, but uses thermoreflectance technique to measure the temperature fluctuation of the metal film surface, finally determines the thermal conductivity of the dielectric thin film.…”

Thermoelectric Properties of (100) Oriented Silicon and Nickel Silicide Nanocomposite Films Grown on Si on Insulator and Si on Quartz Glass Substrates

“…The κ values measured by STPM method re ect the isotropic heat transport from the thermal probe to the Ni-Si NC lms. The κ values of (Ni-Si NC lm)/SOI were also measured by TCN-2ω methods (ULVAC-RIKO Corp.) 11) . Vertical heat transport of lm samples are measured by the TCN-2ω method, however the method was used to measure thermal conductivities of nanocomposite lms in literatures 6,7,12,13) , because the lms had isotropic thermal transport properties owing to the uniformly-distributed phonon scattering center in the lms.…”

“…The Au lm was used as a heat source by AC Joule heating and as a temperature sensor for monitoring the heat penetration from Au lm to (Ni-Si NC lm)/SOI by a thermo-re ectance technique. The equation of the thermal conduction for the three-layered system has been solved analytically to obtain the κ value of Ni-Si NC lms 11) . The temperature-dependent ZT was measured by an electrical-resistance measuring system, (ZEM-3, ULVAC-RIKO Corp.) from 30 to 500 C.…”