2004
DOI: 10.1007/s10765-004-5755-8
|View full text |Cite
|
Sign up to set email alerts
|

Thermal Conductivity of Chalcogenide As2S3 Thin Films

Abstract: In order to investigate the photo-induced thermal property changes in chalcogenide thin films, amorphous As 2 S 3 thin film samples, whose thicknesses are 0.5, 1.0, 2.0, and 4.0 µm, were prepared on silicon wafers by thermal evaporation. Their thermal conductivity was measured by the 3ω method between room temperature and 100 • C. These measurements were repeated after the illumination of an Ar + laser beam whose photon energy is consistent with the bandgap energy of As 2 S 3 , and repeated again for annealed … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
2
0

Year Published

2006
2006
2021
2021

Publication Types

Select...
3
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(2 citation statements)
references
References 26 publications
0
2
0
Order By: Relevance
“…The heat conductance acting along the jet tends to smooth out this effect. However, the low heat conductance of this material ∼ 0.2 W m −1 K −1 (known, in fact, only for solid and accepted in our calculations for liquid state [13]) can lead to significant temperature non-uniformity developing with time at the geometrical perturbation.…”
mentioning
confidence: 79%
“…The heat conductance acting along the jet tends to smooth out this effect. However, the low heat conductance of this material ∼ 0.2 W m −1 K −1 (known, in fact, only for solid and accepted in our calculations for liquid state [13]) can lead to significant temperature non-uniformity developing with time at the geometrical perturbation.…”
mentioning
confidence: 79%
“…The Biot number is defined as, Bi = L × h/κ, [7] where L is the sample thickness, h is the heat-transfer coefficient between the heater and surface (a typical value of 2 kW•m −2 •K −1 is employed in here), [11] and κ is the thermal conductivity of the sample. The value of κ at room temperature is in a range from 0.14 W•m −1 •K −1 to 0.27 W•m −1 •K −1 for As 2 S 3 , [12] and more than 0.14 W•m −1 •K −1 for As 2 Se 3 . [13] It should be noted that, we used the crushed flakes with a thickness of 2-5 microns for UDSC measurements.…”
Section: Thermal Lag In Udsc Measurementmentioning
confidence: 94%