Thermal conductivity of high purity synthetic single crystal diamonds

Inyushkin, A. V.; Талденков, А. Н.; Ralchenko, V.G.; Bolshakov, A. P.; Koliadin, A. V.; Katrusha, A. N.

doi:10.1103/physrevb.97.144305

Cited by 100 publications

(65 citation statements)

References 58 publications

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“…10,26,28,29 An example of the agreement between experimental data (Exp) and the analytical heat transfer solution (Theo) in TDTR data fitting is shown in Figure 1 HPHT sample as expected and matches well with literature values of high-purity diamonds. 30,31 The measured thermal conductivity of the GaN layer (~1.88 μm) in Samp2 is close to experimentally measured bulk values and lower than density-function-theory calculated (DFT) values because of impurities in these samples. The slightly larger thermal conductivity difference between experimental values and DFT values at high temperatures is due to higher order of phonon scatterings such as four phonon scattering.…”

Section: Resultssupporting

confidence: 75%

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

Cheng

Yates

et al. 2020

ACS Appl. Mater. Interfaces

146

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The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and reliability of GaN-based high electron mobility transistors (HEMTs) are limited by the high channel temperature induced by Joule-heating in the device channel. High thermal conductivity substrates (e.g., diamond) integrated with GaN can improve the extraction of heat from GaN-based HEMTs and lower the device operating temperature. However, heterogeneous integration of GaN with diamond substrates is not trivial and presents technical challenges to maximize the heat dissipation potential brought by the diamond substrate. In this work, two modified room-temperature surface-activated bonding (SAB) techniques are used to bond GaN and single crystal diamond with different interlayer thicknesses. Time-domain thermoreflectance (TDTR) is used to measure the thermal properties from room temperature to 480 K. A relatively large thermal boundary conductance (TBC) of the GaN-diamond interfaces with a ~4-nm interlayer (~90 MW/m 2 -K) was observed and material characterization was performed to link the structure of the interface to the TBC. Device modeling shows that the measured GaN-diamond TBC values obtained from bonding can enable high power GaN devices by taking the full advantage of the high thermal conductivity of single crystal diamond and achieve excellent cooling effect. Furthermore, the room-temperature bonding process in this work do not induce stress problem due to different coefficient of thermal expansion in other high temperature integration processes in previous studies. Our work sheds light on the potential for room-temperature heterogeneous integration of semiconductors with diamond for applications of electronics cooling especially for GaN-on-diamond devices.

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Section: Resultssupporting

confidence: 75%

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

Cheng

Yates

et al. 2020

ACS Appl. Mater. Interfaces

146

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“…Phonon lifetime in diamond can be estimated following the approach in Ref. [52]. At low temperatures, the phonon mean free path is completely dominated by boundary scattering and is thus a strong function of crystal dimension and surface quality.…”

Section: Phonon Collection Efficiencymentioning

confidence: 99%

“…At low temperatures, the phonon mean free path is completely dominated by boundary scattering and is thus a strong function of crystal dimension and surface quality. In order to compare the phonon mean free path across different materials under the same geometry and surface quality, we fit experimental measurements of thermal conductivity [52,53] to the Callaway model and then normalized parameters related to boundary scattering to the same values across all materials. The results are plotted in Fig.…”

Section: Phonon Collection Efficiencymentioning

confidence: 99%

“…We note that under the same geometry and surface quality, the phonon mean free path in diamond is still [52,53] and normalized to the same geometry (l b = 2.6 mm) and surface quality (P = 4 × 10 −4 ). The model is described in Ref.…”

Section: Phonon Collection Efficiencymentioning

confidence: 99%

“…The model is described in Ref. [52], with the modification that the specular reflection probability P is a constant rather than a function of phonon frequency.…”

Section: Phonon Collection Efficiencymentioning

confidence: 99%

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et al. 2019

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We propose to use high-purity lab-grown diamond for the detection of sub-GeV dark matter. Diamond targets can be sensitive to both nuclear and electron recoils from dark matter scattering in the MeV and above mass range, as well as to absorption processes of dark matter with masses between sub-eV to 10's of eV. Compared to other proposed semiconducting targets such as germanium and silicon, diamond detectors can probe lower dark matter masses via nuclear recoils due to the lightness of the carbon nucleus. The expected reach for electron recoils is comparable to that of germanium and silicon, with the advantage that dark counts are expected to be under better control. Via absorption processes, unconstrained QCD axion parameter space can be successfully probed in diamond for masses of order 10 eV, further demonstrating the power of our approach.

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Chiodini¹,

Martino²

2022

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Thermal conductivity of high purity synthetic single crystal diamonds

Cited by 100 publications

References 58 publications

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices

Diamond detectors for direct detection of sub-GeV dark matter

Diamond Radiation Detectors

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