Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point

Glassbrenner, C. J.; Slack, Glen A.

doi:10.1103/physrev.134.a1058

Cited by 1,440 publications

(766 citation statements)

References 42 publications

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“…Thermal conductivity values obtained in our calculations are included in Table II. All of them are roughly twice the experimental value for 500 K (approximately 0.33 W=cmK for Ge and 0.78 W=cmK for Si), 45 but for D-SW-Ge, which is four times higher. Similar deviations have been reported by other authors using this method for Si 44,46 and can be attributed to the fact that, in the natural material, defect scattering significantly reduces thermal conductivity.…”

Section: Germanium Siliconmentioning

confidence: 64%

Molecular dynamics simulations of damage production by thermal spikes in Ge

López¹,

Pelaz²,

Santos³

et al. 2012

Journal of Applied Physics

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Molecular dynamics simulation techniques are used to analyze damage production in Ge by the thermal spike process and to compare the results to those obtained for Si. As simulation results are sensitive to the choice of the inter-atomic potential, several potentials are compared in terms of material properties relevant for damage generation, and the most suitable potentials for this kind of analysis are identified. A simplified simulation scheme is used to characterize, in a controlled way, the damage generation through the local melting of regions in which energy is deposited. Our results show the outstanding role of thermal spikes in Ge, since the lower melting temperature and thermal conductivity of Ge make this process much more efficient in terms of damage generation than in Si. The study is extended to the modeling of full implant cascades, in which both collision events and thermal spikes coexist. Our simulations reveal the existence of bigger damaged or amorphous regions in Ge than in Si, which may be formed by the melting and successive quenching induced by thermal spikes. In the particular case of heavy ion implantation, defect structures in Ge are not only bigger, but they also present a larger net content in vacancies than in Si, which may act as precursors for the growth of voids and the subsequent formation of honeycomb-like structures.

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Section: Germanium Siliconmentioning

confidence: 64%

Molecular dynamics simulations of damage production by thermal spikes in Ge

López¹,

Pelaz²,

Santos³

et al. 2012

Journal of Applied Physics

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“…However, beyond 0.96 J, it was observed that the Er:YAG laser interacted with silicon assisted by a water layer and was thermally damaged. For systematic investigation, we set the pulse energy to the maximum (1.16 J) and used pulse numbers of 1, 3,4,6,8,12,14,15,16,18,20, and 22. The whole experiment was repeated three times.…”

Section: Resultsmentioning

confidence: 99%

Water-assisted pulsed Er:YAG laser interaction with silicon

Kim

2015

Journal of Applied Physics

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Articles you may be interested in Plasmonic formation mechanism of periodic 100-nm-structures upon femtosecond laser irradiation of silicon in water J. Appl. Phys. 116, 074902 (2014) Silicon is virtually transparent to the Er:YAG laser with a wavelength of 2.94 lm. In this study, we report that moderately doped silicon (1-10 X cm) can be processed by a pulsed Er:YAG laser with a pulse duration of 350 ls and a peak laser intensity of 1.7 Â 10 5 W/cm 2 by applying a thin water layer on top of silicon as a light absorbing medium. In this way, water is heated first by strongly absorbing the laser energy and then heats up the silicon wafer indirectly. As the silicon temperature rises, the free carrier concentration and therefore the absorption coefficient of silicon will increase significantly, which may enable the silicon to get directly processed by the Er:YAG laser when the water is vaporized completely. We also believe that the change in surface morphology after melting could contribute to the increase in the laser beam absorptance. It was observed that 525 nm-thick p-type wafer specimens were fully penetrated after 15 laser pulses were irradiated. Bright yellow flames were observed during the process, which indicates that the silicon surface reached the melting point. V C 2015 AIP Publishing LLC. [http://dx

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“…Further, the cross-sectional area of our supercell is smaller than that of the smallest nanowire measured to date. The κ(T = 125 K) of a 22-nm diameter (our 1.5-nm supercell) is measured (calculated) to be 150 (300) times smaller than the bulk, 55 6.0 W/cm K.…”

Section: G Validity Of the Fitting Equationmentioning

confidence: 99%

“…A qualitatively identical behavior is predicted when 28 Si is doped with 5.2 at.% of C, Fe, and Ge. The drop occurs for 12 C (we invented 11 C and it shows κ bouncing back upward), 55 Fe, and 74 Ge. The magnitude of the drop depends on the impurity, and some isotopes reduce κ much more than others.…”

Section: -7mentioning

confidence: 99%

Thermal conductivity of Si nanostructures containing defects: Methodology, isotope effects, and phonon trapping

et al. 2011

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A first-principles method to calculate the thermal conductivity in nanostructures that may contain defects or impurities is described in detail. The method mimics the so-called "laser-flash" technique to measure thermal conductivities. It starts with first-principles density-functional theory and involves the preparation of various regions of a supercell at slightly different temperatures. The temperature fluctuations are minimized without using a thermostat and, after averaging over random initial conditions, temperature changes as small as 5 K can be monitored (from 120 to 125 K). The changes to the phonon density of states and the specific heat induced by several atomic percent of impurities are discussed. The thermal conductivity of Si supercells is calculated as a function of the temperature and of the impurity content. For most impurities, the drop in thermal conductivity is unremarkable. However, there exist narrow ranges of impurity parameters (mass, bond strength, etc.) for which substantial drops in the thermal conductivity are predicted. These drops are isotope dependent and appear to be related to the vibrational lifetime of specific impurity-related modes.

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Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point

Cited by 1,440 publications

References 42 publications

Molecular dynamics simulations of damage production by thermal spikes in Ge

Molecular dynamics simulations of damage production by thermal spikes in Ge

Water-assisted pulsed Er:YAG laser interaction with silicon

Thermal conductivity of Si nanostructures containing defects: Methodology, isotope effects, and phonon trapping

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