Thermal Conductivity of Silicon from 300 to 1400°K

Shanks, H. R.; Maycock, Paul D.; Sidles, P. H.; Danielson, G. C.

doi:10.1103/physrev.130.1743

Cited by 470 publications

(212 citation statements)

References 13 publications

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“…15 we display the heat capacity C P of silicon at P = 1 bar, as derived from PIMC (black symbols) and classical MC (open squares) simulations 127 . Experimental results 131,132 are represented by a solid line. The agreement between values obtained in the PIMC simulations with the Stillinger-Weber potential and experimental data was satisfactory.…”

Section: Group-iv Materialsmentioning

confidence: 99%

Path-integral simulation of solids

Herrero

Ramı́rez

2014

J. Phys.: Condens. Matter

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The path-integral formulation of the statistical mechanics of quantum many-body systems is described, with the purpose of introducing practical techniques for the simulation of solids. Monte Carlo and molecular dynamics methods for distinguishable quantum particles are presented, with particular attention to the isothermal-isobaric ensemble. Applications of these computational techniques to different types of solids are reviewed, including noble-gas solids (helium and heavier elements), group-IV materials (diamond and elemental semiconductors), and molecular solids (with emphasis on hydrogen and ice). Structural, vibrational, and thermodynamic properties of these materials are discussed. Applications also include point defects in solids (structure and diffusion), as well as nuclear quantum effects in solid surfaces and adsorbates. Different phenomena are discussed, as solid-to-solid and orientational phase transitions, rates of quantum processes, classical-to-quantum crossover, and various finite-temperature anharmonic effects (thermal expansion, isotopic effects, electron-phonon interactions). Nuclear quantum effects are most remarkable in the presence of light atoms, so that especial emphasis is laid on solids containing hydrogen as a constituent element or as an impurity.

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Section: Group-iv Materialsmentioning

confidence: 99%

Path-integral simulation of solids

Herrero

Ramı́rez

2014

J. Phys.: Condens. Matter

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“…[4][5][6] This is possible via nanostructure development in materials with the mean free paths of phonons longer than those of electrons and, therefore, where defects can be engineered to scatter phonons predominantly. 2,[7][8][9][10][11][12][13][14][15][16][17] For example, electroless etched Si nanowires with rough surfaces exhibit a thermal conductivity as low as ~1 W/m·K: 2 a significant reduction compared to the thermal conductivity of bulk Si (142 W/m·K 18 at room temperature). In addition, a room temperature phonon thermal conductivity of approximately 1.8 W/m·K has been reported for an n-type SiGe alloy with fine grains.…”

Section: Introductionmentioning

confidence: 99%

Thermal transport in SiGe superlattice thin films and nanowires: Effects of specimen and periodic lengths

Lin

Strachan

2013

Phys. Rev. B

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We compute the thermal conductivity of superlattice (SL) thin films and nanowires for various SL periods and total specimen lengths using non-equilibrium molecular dynamics (MD).Both types of materials exhibit similar behaviors with respect to SL period but the thermal conductivity of the thin films exhibits a significantly higher sensitivity to the specimen length.Notably, the thermal conductivity of SL thin films is smaller than those of the corresponding nanowires for specimen lengths below approximately 35 nm. These results arise from the complex dependence of the conductivities of the interfaces and the SL components on the specimen size and period. These trends and observations are explained using a simple phonon model that builds on the relationship between the cumulative thermal conductivity and the phonon wavelength.

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“…The last term corresponds to a bipolar carrier transport, known as bipolar diffusion, where the same amount of electrons and holes flow to low temperature side. 6,7) The thermal conductivity due to the bipolar carrier transport increases significantly with the minority carrier concentration thermally excited, even if the minority carrier concentration is much smaller than that of majority carriers. 8,13) …”

Section: Seebeck Effect Peltier Effect and Electronic Thermal Conducmentioning

confidence: 99%

Electronic Transports for Thermoelectric Applications on IV–VI Semiconductors

et al. 2012

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Seebeck effect, Peltier effect, Thomson effect, electronic thermal conductivity, Hall effect, and Nernst effect are described on the basis of electronic conduction theory, taking account of effective mass anisotropy, nonparabolicity in Ek relation, and temperature dependent band gap. It is shown that the temperature dependence of the band gap does not modify the basic equations for the Seebeck coefficient, thermal conductivity, and Nernst coefficient. In narrow gap semiconductors, existence of minority carriers significantly enhances the electronic thermal conductivity, owing to the multiple carrier transport known as bipolar diffusion. Calibration coefficient £ for the Hall effect (R H ¼ À£=en) is increased by nonparabolicity in the Ek relation. Nernst coefficient gives useful information on scattering properties of the materials.

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Thermal Conductivity of Silicon from 300 to 1400°K

Cited by 470 publications

References 13 publications

Path-integral simulation of solids

Path-integral simulation of solids

Thermal transport in SiGe superlattice thin films and nanowires: Effects of specimen and periodic lengths

Electronic Transports for Thermoelectric Applications on IV–VI Semiconductors

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Thermal Conductivity of Silicon from 300 to 1400°K

Cited by 470 publications

References 13 publications

Path-integral simulation of solids

Path-integral simulation of solids

Thermal transport in SiGe superlattice thin films and nanowires: Effects of specimen and periodic lengths

Electronic Transports for Thermoelectric Applications on IV&ndash;VI Semiconductors

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Product

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Electronic Transports for Thermoelectric Applications on IV–VI Semiconductors