Thermal conductivity of thin amorphous alumina films

Stark, I.; Stordeur, M.; Syrowatka, Frank

doi:10.1016/0040-6090(93)90227-g

Cited by 57 publications

(45 citation statements)

References 13 publications

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“…319 The reported thermal conductivities for poly-crystalline 254,320 and amorphous [57][58][59]321 Al 2 O 3 of 16-33 and 0.7-2.6 W/mK, respectively, are also comparable to the previously discussed lower range reported for AlN and amorphous SiO 2 (see Table VIII Regarding HfO 2 , we are unaware of any reports of thermal conductivity for single-crystal hafnia. Investigations of bulk ceramic or sputter deposited thin film poly-crystalline hafnia doped/stabilized with yttria for thermal barrier coating applications have reported relatively low thermal conductivities of 1.5-2.0 W/mK.…”

Section: 283supporting

confidence: 58%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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Section: 283supporting

confidence: 58%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…Earlier studies focus on thermal properties measurements of nonporous films fabricated through various techniques such as anodization, 11 and rf and dc sputtering 12 with application in the integrated circuit ͑IC͒ industry. Earlier studies focus on thermal properties measurements of nonporous films fabricated through various techniques such as anodization, 11 and rf and dc sputtering 12 with application in the integrated circuit ͑IC͒ industry.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic thermal properties of nanochanneled alumina templates

Borca-Tasciuc

Chen

2005

Journal of Applied Physics

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A composite photothermal technique for the measurement of thermal properties of solids J. Appl. Phys.Anodic porous alumina templates contain highly ordered nanochannels that are frequently used for fabrication of thermoelectric nanowires. Thermal properties of the templates are of high interest in thermoelectric device applications. This paper reports the temperature-dependent, anisotropic thermal conductivity and thermal diffusivity of 55 µm thick anodic template Anodisc from Whatman, Inc. of 0.02 µm pore diameter and ϳ30% porosity. The 3 technique was employed to carry out measurements of the effective thermal conductivity and thermal diffusivity in the direction parallel to the nanochannels axis, while thermal anisotropy of the sample was estimated theoretically using the Maxwell model. Measured effective thermal conductivity is between 0.54 W/mK at 80 K and 1.3 W/mK at 300 K. Measured thermal diffusivity decreases from 2.1ϫ 10 −6 m 2 s −1 at 80 K to 1.08ϫ 10 −6 m 2 s −1 at 300 K. A photothermoelectric technique was employed to measure independently the components of the thermal diffusivity along the direction parallel to the nanochannels axis and in the plane perpendicular to this direction. Reasonable agreements were found between the results provided by the two characterization techniques.

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“…where W 0 is the total absorbed power, R is the radius of the film within a hole of supporting metal grid (here 6.4 Â 10 À5 m), r 0 is the radius of the irradiated region (here 2 Â 10 À7 m), l 0 is the specimen thickness (here 1.5 Â 10 À8 m), k is the thermal conductivity (here 1.6 W m À1 K À1 for anodic alumina film 27 ), e is the fraction of energy absorbed, usually 0.01, 28 V is the accelerating voltage (here the highest voltage 2 Â 10 5 V), and q 0 is the current intensity (here 6 Â 10 2 A m À2 ). For the present irradiation conditions, the temperature rise in the irradiated area was calculated to be 6 K based on the Eq.…”

Section: A Crystallization Mechanisms Of A-al 2 Omentioning

confidence: 99%

Atomic rearrangements in amorphous Al2O3 under electron-beam irradiation

Nakamura

Ishimaru

Yasuda

et al. 2013

Journal of Applied Physics

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The electron-irradiation-induced crystallization of amorphous Al 2 O 3 (a-Al 2 O 3 ) was investigated by in-situ transmission electron microscopy under the wide electron-energy region of 25-300 keV. The formation of c-Al 2 O 3 nanocrystallites was induced by irradiating the a-Al 2 O 3 thin film along with the formation of nanovoids in the crystalline grains regardless of the acceleration voltage. The crystallization became more pronounced with decreasing the electron energy, indicating that electronic excitation processes play a dominant role in the formation of c-Al 2 O 3 . Radial distribution analyses suggested that a-Al 2 O 3 transforms to c-phase via the "excited" ("stimulated") amorphous state, in which the breaking and rearrangement of unstable short-range Al-O bonds, i.e., fivefold-coordinated Al-O (AlO 5 ) basic units, occur.

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Thermal conductivity of thin amorphous alumina films

Cited by 57 publications

References 13 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Anisotropic thermal properties of nanochanneled alumina templates

Atomic rearrangements in amorphous Al2O3 under electron-beam irradiation

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