Thermal conductivity of thin films of gallium nitride, doped with aluminium, measured with 3ω method

Filatova-Zalewska, Alexandra; Litwicki, Z.; Suski, T.; Jeżowski, A.

doi:10.1016/j.solidstatesciences.2019.106105

Cited by 14 publications

(6 citation statements)

References 37 publications

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“…Even though the thermal conductivity of bulk and film GaN was extensively investigated over the last decades [12][13][14][15][16][17][18], there were only several reports on thermal conductivity of AlGaN films and AlN/GaN superlattices. Results of the measurements of Al x Ga 1−x N films (with x changing from 0.1 to 0.44) showed that thermal conductivity decreases with increasing amount of Al mass fraction and decreasing film thickness [19][20][21][22][23][24]. Both increase [21,24] and decrease [19] of thermal conductivity with increasing temperature was observed.…”

Section: Introductionmentioning

confidence: 99%

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Anisotropic thermal conductivity of AlGaN/GaN superlattices

et al. 2020

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High thermal conductivity is an important parameter for nitride-based power electronic and deep-UV light emitters. Especially in the latter case short period superlattices and multicomponent alloys are used and the knowledge of the thermal properties of the binary compounds is sufficient. In-plane and cross-plane thermal conductivity of AlGaN/GaN superlattices were measured by differential two-wire 3ω method in the temperature range from 147 to 325 K. Samples were grown by metalorganic vapor phase epitaxy; the structure quality and accuracy of superlattice structures preparation were verified by means of HRXRD and transmission electron microscopy. It was observed, that value of thermal conductivities decrease with decreasing period thickness, while temperature dependencies differ from each other—in-plane thermal conductivity decreases, and cross-plane—increases with increasing temperature. Callaway method was used for thermal conductivity calculation; dependence of boundary scattering rate on the phonon wavelength was taken into account. Minimum thermal conductivity was added to calculated values to include the influence of high frequency acoustic phonons and optical phonons on the heat transport. Calculations are in good agreement with experimental results.

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Section: Introductionmentioning

confidence: 99%

“…Results of the measurements of Al x Ga 1−x N films (with x changing from 0.1 to 0.44) showed that thermal conductivity decreases with increasing amount of Al mass fraction and decreasing film thickness [19][20][21][22][23][24]. Both increase [21,24] and decrease [19] of thermal conductivity with increasing temperature was observed.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic thermal conductivity of AlGaN/GaN superlattices

et al. 2020

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“…Those parameters for AlGaN were obtained with the use of Vegard's law. [35,36] For calculation of TBC, acoustic (AMM) and diffuse mismatch model (DMM) are usually used. [37,38] According to the AMM, [37,39] phonons are plane waves, which propagate through a continuum medium, and they can be reflected on the interface or transmitted through the specular interface.…”

Section: Calculationmentioning

confidence: 99%

Calculation of Thermal Conductivity of AlGaN/GaN Superlattices

Filatova-Zalewska

Litwicki

Jeżowski

2023

Physica Status Solidi (b)

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Herein, the results of theoretical investigation of anisotropic thermal conductivity of AlGaN/GaN superlattices (SLs) are presented. For calculations, the Boltzmann transport equation in the relaxation time approximation is used. Results of computations are compared with experiment and theoretical result obtained using Callaway model. Good agreement between experimental and theoretical results is observed. Opportunity of use of the Callaway model for calculation of anisotropic thermal conductivity of SLs is discussed.

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“…Recently, both compounds and other ternary derivatives, once again, catched the attention of researchers and this time for their potential thermoelectric applications. − However, due to prevalent self-heating in nitride-based devices, ,− performance operation was hampered especially at high temperatures. This was solved through doping as mentioned by Zalewska et al ., wherein by increasing the amount of Al in GaN, the thermal conductivity of the thin film decreased.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh Power Factors in Ultrawide-Band-Gap GaB₃N₄ and AlB₃N₄ for High-Temperature Thermoelectric Applications

Panneerselvam

Devi

Baldo

et al. 2020

ACS Appl. Electron. Mater.

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With recent thermoelectric studies concentrating too much on low- and mid-temperature applications, an interesting question is, “are there any materials suitable for high-temperature thermoelectric operations?” To answer this, we have demonstrated in this work the viability of the ternary ultrawide-band-gap materials GaB3N4 and AlB3N4 for high-temperature thermoelectric applications using the first-principles calculation method. Our accurate transport calculations, considering both elastic and inelastic scattering mechanisms, reveal the ultrahigh power factors as high as 1821 μW m–1 K–2 in GaB3N4 and 1876 μW m–1 K–2 in AlB3N4 at 2000 K. The power factors are calculated from the Seebeck coefficients and electrical conductivities for both electron and hole carrier concentrations between 1018 and 1021 cm–3. For the figure-of-merit (ZT) calculation, the obtained power factors along with the electronic thermal conductivities determined from the definite Lorenz numbers and the lattice thermal conductivities from the phonon vibrations were used. The calculated ZT values seem to be appreciable for high-temperature applications considering the materials’ stability factor and the temperature range within the optimum electron carrier concentration of 1021 cm–3. Although the lattice thermal conductivities are higher, which decrease the values of ZT, considering the ultrahigh power factors instead of the ZT factor could be the right choice for high-temperature thermoelectric applications.

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Thermal conductivity of thin films of gallium nitride, doped with aluminium, measured with 3ω method

Cited by 14 publications

References 37 publications

Anisotropic thermal conductivity of AlGaN/GaN superlattices

Anisotropic thermal conductivity of AlGaN/GaN superlattices

Calculation of Thermal Conductivity of AlGaN/GaN Superlattices

Ultrahigh Power Factors in Ultrawide-Band-Gap GaB₃N₄ and AlB₃N₄ for High-Temperature Thermoelectric Applications

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Thermal conductivity of thin films of gallium nitride, doped with aluminium, measured with 3ω method

Cited by 14 publications

References 37 publications

Anisotropic thermal conductivity of AlGaN/GaN superlattices

Anisotropic thermal conductivity of AlGaN/GaN superlattices

Calculation of Thermal Conductivity of AlGaN/GaN Superlattices

Ultrahigh Power Factors in Ultrawide-Band-Gap GaB3N4 and AlB3N4 for High-Temperature Thermoelectric Applications

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Product

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About

Ultrahigh Power Factors in Ultrawide-Band-Gap GaB₃N₄ and AlB₃N₄ for High-Temperature Thermoelectric Applications