Thermal conductivity of type-Ib HPHT synthetic diamond irradiated with electrons

Inyushkin, A.V.; Taldenkov, A.N.; Yelisseyev, A.P.; Vins, V.G.

doi:10.1016/j.diamond.2023.110302

Cited by 2 publications

(1 citation statement)

References 44 publications

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“…[19][20][21][22] For example, ordinary synthetic Ib diamonds have a nitrogen content of about 200 ppm and a light yellow color, and can be widely used in abrasives, grinding tools, cutting tools, and other fields. [23][24][25] The addition of nitrogen getters to the synthesis chamber can yield the production of type-IIa diamond with a nitrogen content of less than 1 ppm. This type is colorless and usually contains NV centers inside, which can be applied to quantum information and can also be widely used in jewelry and other fields.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and nitrogen content regulation of diamond in a high-pressure hydrogen-rich environment

Huang 黄,

Chen 陈,

Fang 房

2024

Chinese Phys. B

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The regulating nitrogen content of diamond in a hydrogen rich high-temperature and high-pressure (HPHT) growth environment was systematically investigated in this work by developing three growth systems, namely, "FeNi+Ti", "FeNi+C3N6H6", and "FeNi+Ti+C3N6H6". Optical microscopy, infrared spectroscopy, and photoluminescence (PL) spectroscopy measurements were conducted to analyse the spectroscopic characteristics of diamonds grown in these three systems. From our analysis, it was demonstrated that the presence of hydrogen in the sp3 hybrid C-H does not directly affect the colour of the diamond and facilitates the increase of Nitrogen-Vacancy (NV) center concentration in a high nitrogen content diamond. In addition, titanium plays an important role in nitrogen removal, while its impact on hydrogen doping within the diamond lattice is insignificant. Most importantly, by regulating the ratio of nitrogen impurities that coexist in the nitrogen and hydrogen HPHT environment, the production of hydrogenous IIa type diamond, hydrogenous Ib type diamond, and hydrogenous high nitrogen type diamonds was achieved with a nitrogen content of less than 1 ppm to 1600 ppm.

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Section: Introductionmentioning

confidence: 99%

Synthesis and nitrogen content regulation of diamond in a high-pressure hydrogen-rich environment

Huang 黄,

Chen 陈,

Fang 房

2024

Chinese Phys. B

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Thermal conductivity of group IV elemental semiconductors

Inyushkin

2023

Journal of Applied Physics

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The thermal conductivity of group IV elements—germanium, silicon, and diamond—is described in order to demonstrate various important and interesting aspects of the mechanism of phonon heat transfer in single-crystalline semiconductors and dielectrics. The measured temperature dependence of thermal conductivity κ(T) for these materials reveals different phonon scattering processes that determine thermal conductivity. In addition to the intrinsic processes of phonon–phonon scattering, scattering by isotopes, dopants, free electrons, sample surfaces, the effects of phonon focusing, irradiation with high-energy particles, and phonon hydrodynamics are discussed.

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Thermal conductivity of type-Ib HPHT synthetic diamond irradiated with electrons

Cited by 2 publications

References 44 publications

Synthesis and nitrogen content regulation of diamond in a high-pressure hydrogen-rich environment

Synthesis and nitrogen content regulation of diamond in a high-pressure hydrogen-rich environment

Thermal conductivity of group IV elemental semiconductors

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