Thermal Contact Resistance Optimization of Press-Pack IGBT Device Based on Liquid Metal Thermal Interface Material

Xiao, Wang; Li, Hui; Yao, Ran; Lai, Wu‐Wei; Liu, Renkuan; Yu, Renze; Chen, Xianping; Li, Jinyuan

doi:10.1109/tpel.2021.3129846

Cited by 26 publications

(5 citation statements)

References 21 publications

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“…In addition, because Bi-based LMs can obtain good wettability and thermal conductivity by adjusting the ratio of alloying elements, as shown in Fig. 10C, Wang et al 146 proposed filling the Bi-based LM thermal interface material between the insulated-gate bipolar transistor chip and the molybdenum layer. This method effectively reduces the thermal contact resistance of the press-pack insulated-gate bipolar transistor (PP-IGBT) device and breaks the limitation that the chip must be sealed.…”

Section: Typical Applications Of Bismuth-based Liquid Metalsmentioning

confidence: 99%

Bismuth-based liquid metals: advances, applications, and prospects

Zhang,

Liu,

Deng

2024

Mater. Horiz.

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Section: Typical Applications Of Bismuth-based Liquid Metalsmentioning

confidence: 99%

Bismuth-based liquid metals: advances, applications, and prospects

Zhang,

Liu,

Deng

2024

Mater. Horiz.

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“…Unlike the soldering or sintering process which exposes devices to high temperatures and rigidly bonds them, liquid metal can achieve interconnection at room temperature with a fluidic approach [15]. For power electronics, bismuth-based liquid metal has been used to reduce the thermal resistance of a press-pack IGBT module [16], while liquid gallium was used as the top-side interconnection for a diode [17]. This paper fully utilizes the advantages of LMs with an embedded floating die structure.…”

Section:  − and C Diementioning

confidence: 99%

Liquid Metal Fluidic Connection and Floating Die Structure for Ultralow Thermomechanical Stress of SiC Power Electronics Packaging

Mu,

Janabi,

et al. 2024

IEEE Trans. Power Electron.

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Coefficients of thermal expansion (CTE) of various materials in packaging structure layers vary largely, causing significant thermomechanical stress in power electronic packages during operation. For wirebond-less SiC modules, the stress is even larger due to the structure's rigidity and the high Young's Modulus of SiC crystals. This paper takes a FPCB/die/AMB packaging stack as an example to prove the feasibility of floating die structure enabled by liquid metal (LM) fluidic connection. The CTE mismatch among the die, PCB and AMB substrate is decoupled by the LM layer without compromise of thermal and electrical conduction. Finite element analysis demonstrates a 56% reduction in von Mises stress of the device and more than 99% shear stress reduction at the FPCB-AMB interface, compared with a conventional rigid solder connection. Testing results show that LM-based packaging has similar thermal and electrical conduction and higher breakdown voltage when compared with the soldered counterpart. Accelerated thermal cycling aging tests validate the stability of the insulation ring for LM-based packaging, especially under high-temperature conditions. The feasibility of using LM fluidic interconnections for a floating die structure of SiC packaging is validated.

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“…Meanwhile, bismuth‐based liquid metal was used as chip‐attaching material in a PP‐IGBT by Wang et al., as shown in Figure 1b, and was found to reduce the contact thermal resistance by 30%. In addition, thermal spraying was used to coat the liquid metal instead of a complex sintering process [19]. However, the chip‐attaching material may lead to new reliability problems [20, 21].…”

Section: Package Structures Of Press‐pack Igbt Modulesmentioning

confidence: 99%

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

Liu

Yao

et al. 2022

IET Power Electronics

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Press-pack insulated gate bipolar transistor modules (PP-IGBTs) have been widely used in high-voltage and high-power-density applications, such as high-voltage direct-current (HVDC) converters, because of their advantages of low thermal resistance, double side cooling, and short-circuit failure mode. Package failure is one of the main reasons for IGBT module failure. Package condition monitoring is the key to realizing modules fault diagnosis, condition prediction, and intelligent operation and maintenance. At present, a variety of characteristic parameters, such as on voltage and junction temperature, are used in package condition monitoring. However, the characteristic parameters show different variation laws under different package degradation modes. Therefore, the relationship between package degradation modes and characteristic parameters is the key to realizing the condition monitoring, so as to improve the reliability of the power electronic system. In this paper, first, the package structure of a PP-IGBT is analyzed. Second, the mechanisms of fretting wear degradation, gate-oxide degradation, spring degradation, lid warping degradation, micro arcing degradation, short-circuit failure, and open-circuit failure are reviewed. The variation laws of characteristic parameters under each degradation and failure mode are then investigated. Finally, three difficult problems including characteristic parameter measurement, especially pressure monitoring, high-sensitivity detection, and characterization and evaluation, are discussed and analyzed.

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Thermal Contact Resistance Optimization of Press-Pack IGBT Device Based on Liquid Metal Thermal Interface Material

Cited by 26 publications

References 21 publications

Bismuth-based liquid metals: advances, applications, and prospects

Bismuth-based liquid metals: advances, applications, and prospects

Liquid Metal Fluidic Connection and Floating Die Structure for Ultralow Thermomechanical Stress of SiC Power Electronics Packaging

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

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