Thermal Curing Property of Silicone Encapsulant Containing Quantum Dot Surrounded by Various Types of Ligands

Abstract

In this study, the silicone thermal curing degree of the silicone-encapsulated quantum dot light emission diode was measured using the various types of chemical ligands around quantum dot. It was confirmed that the trioctyl phosphin oxide (TOPO) ligand around the quantum dot was responsible for dispersion of the quantum dot in silicone encapsulant and decline of the thermal curing degree of the silicone encapsulant. Also, it was confirmed that the thermal curing degree of silicone encapsulants containing the steric acid (SA) and the dodecanoic acid (DA) ligands were higher than the one of TOPO ligand.

High-performance quantum dot light-emitting diodes using chip-scale package structures with high reliability and wide color gamut for backlight displays

“…CQDF was prepared by homogenously mixing green QD powders, red KSF phosphors, and silicone (OE-6636) in a ratio of 1 : 49 : 50 by weight. Importantly, the amount of surface ligands of green QDs decrease during the purication process of solution-mixing method, 12,13 which improved the dispersion of QDs in a silicone resin matrix. Therefore, the QYs of green QDs aer ligand removal decreased from 75% to 70%.…”

Structural optimization for remote white light-emitting diodes with quantum dots and phosphor: packaging sequence matters

“…Therefore, the QDs suffer from a high optical power density. While in the remote type, QDs film is away from the chip, thus suffering from a lower optical power density, and the chemical incompatibility between QDs surface ligands and phosphor-silicone gel can be released, by changing the polymeric environment of QDs layer [21][22][23][24][25][26][27]. Therefore, the remote packaging structure is widely utilized for fabricating WLEDs with both QDs and phosphor.…”