Thermal decomposition of arsine on GaAs( 100)

Wolf, Martin; Zhu, Xiaoyang; Huett, T.; White, John

doi:10.1016/0039-6028(92)90647-o

Cited by 24 publications

(9 citation statements)

References 25 publications

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“…The broadening and peak shift can be due to molecular water adsorption or H–As hydrogen bonds that are formed due to water dissociation. Higher binding energy peaks in the As 2p XPS spectra were reported for surface AsH x ( x = 1,2) species . Our assumption of H–As bond formation is also supported by HREELS studies that reported the formation of H–As bonds at the interface of H 2 O/GaAs under UHV conditions …”

Section: Resultssupporting

confidence: 81%

“…Higher binding energy peaks in the As 2p XPS spectra were reported for surface AsH x (x = 1,2) species. 27 Our assumption of H−As bond formation is also supported by HREELS studies that reported the formation of H−As bonds at the interface of H 2 O/GaAs under UHV conditions. 16 To investigate the chemistry at the H 2 O/GaAs interface at different pressures, we chose the Ga 2p (because the 2p signal is the most surface sensitive) and O 1s peaks for the following detailed discussion.…”

Section: Resultssupporting

confidence: 74%

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Dissociative Adsorption of Water on an H₂O/GaAs(100) Interface: In Situ Near-Ambient Pressure XPS Studies

Zhang

Ptasińska

2014

J. Phys. Chem. C

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Dissociative water adsorption on a GaAs(100) surface is demonstrated using X-ray photoelectron spectroscopy (XPS) carried out in situ under near-ambient conditions. These in situ XPS studies enable us to monitor the evolution of water dissociation on GaAs under elevated pressures and temperatures for the first time. In pressure-dependent XPS studies, the GaAs surface was exposed to room-temperature water vapor at pressures ranging from UHV to 5 mbar. With an increase in H 2 O pressure, enhancement of oxygenation and hydroxylation of surface Ga atoms is observed. In addition, strong XPS signals are also detected that originate from water molecules that are molecularly adsorbed onto the GaAs surface and hydrogen-bonded to surface OH species. Peak broadening and shifts in the As 2p XPS spectra are correlated with the signal increase resulting from surface HO−Ga species, suggesting the formation of surface H−As bonds. In temperature-dependent XPS studies, the GaAs surface was annealed from room temperature up to 773 K at a water vapor pressure of 0.1 mbar. The temperature increase leads to desorption of weakly adsorbed water molecules or their dissociation, resulting in surface Ga oxidation. However, no changes in chemical state of the surface As atoms are observed at higher temperatures.

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Section: Resultssupporting

confidence: 81%

Section: Resultssupporting

confidence: 74%

Dissociative Adsorption of Water on an H₂O/GaAs(100) Interface: In Situ Near-Ambient Pressure XPS Studies

Zhang

Ptasińska

2014

J. Phys. Chem. C

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“…15 It is known that desorption of the As cap from the GaAs(001) surface leads to the formation of a c(2 × 8)/(2 × 4) reconstruction with surface As dimers. 14,16 Upon adsorption of 1 or 5 nm C 60 , the band structure of GaAs(001) is replaced by features of C 60 molecular orbitals (MOs). 9,17 The onset of the highest occupied molecular orbital (HOMO) is at 1.90 ± 0.05 eV below E F , nearly independent of C 60 coverage.…”

Section: Resultsmentioning

confidence: 99%

Charge Transport and Separation Dynamics at the C₆₀/GaAs(001) Interface

2014

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We probe charge separation dynamics at a model hybrid organic/ inorganic semiconductor heterojunction, C 60 /GaAs(001), using time-resolved twophoton photoemission spectroscopy (TR-2PPE). For a p-type GaAs(001) surface with downward band bending, TR-2PPE allows us to directly follow the subpicosecond drift of photoexcited electrons toward the surface by the space charge field. Upon C 60 adsorption, we find that electron transfer from the GaAs conduction band to C 60 occurs on the faster time scale of ≤0.1 ps. We discuss the role of the space charge field in assisting electron transfer at the hybrid organic/inorganic semiconductor interface.

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“…Many studies have been made of the surface reactions relevant to GaAs metalorganic vapor-phase epitaxy ͑MOVPE͒ using trimethylgallium ͑TMGa͒ and arsine (AsH 3 ). [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] Many mechanisms have been proposed for this process as well. 1,2,4,[6][7][8] However, few if any of these have included the effect of the GaAs surface structure on the reaction kinetics.…”

Section: ͓S0003-6951͑96͒03247-0͔mentioning

confidence: 99%

Site-specific reaction kinetics for gallium arsenide metalorganic vapor-phase epitaxy

Adamson

Han

Hicks

1996

Applied Physics Letters

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We have developed a kinetic model for arsine decomposition on GaAs(001) that accounts for the effect of the surface reconstructions on the rates of As4 and As2 desorption. The main assumption of the model is that As2 desorbs more slowly from Ga sites than from As sites. The model accurately simulates the temperature-programmed desorption of arsenic from GaAs(001). In addition, it reveals how the As coverage and the As2 and As4 production rates depend on the conditions employed during GaAs metalorganic vapor-phase epitaxy.

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Thermal decomposition of arsine on GaAs( 100)

Cited by 24 publications

References 25 publications

Dissociative Adsorption of Water on an H₂O/GaAs(100) Interface: In Situ Near-Ambient Pressure XPS Studies

Dissociative Adsorption of Water on an H₂O/GaAs(100) Interface: In Situ Near-Ambient Pressure XPS Studies

Charge Transport and Separation Dynamics at the C₆₀/GaAs(001) Interface

Site-specific reaction kinetics for gallium arsenide metalorganic vapor-phase epitaxy

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Thermal decomposition of arsine on GaAs( 100)

Cited by 24 publications

References 25 publications

Dissociative Adsorption of Water on an H2O/GaAs(100) Interface: In Situ Near-Ambient Pressure XPS Studies

Dissociative Adsorption of Water on an H2O/GaAs(100) Interface: In Situ Near-Ambient Pressure XPS Studies

Charge Transport and Separation Dynamics at the C60/GaAs(001) Interface

Site-specific reaction kinetics for gallium arsenide metalorganic vapor-phase epitaxy

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Dissociative Adsorption of Water on an H₂O/GaAs(100) Interface: In Situ Near-Ambient Pressure XPS Studies

Dissociative Adsorption of Water on an H₂O/GaAs(100) Interface: In Situ Near-Ambient Pressure XPS Studies

Charge Transport and Separation Dynamics at the C₆₀/GaAs(001) Interface