Thermal dependence of the refractive index of InP measured with integrated optical demultiplexer

Gini, E.; Melchior, H.

doi:10.1063/1.361742

Cited by 37 publications

(16 citation statements)

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“…This is especially true for InP, which has a large refractive index at wavelength [15]. Previously reported devices utilize a coupling mechanism in which an input waveguide is actuated to end couple with one of several output waveguides.…”

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confidence: 99%

InP-based optical waveguide MEMS switches with evanescent coupling mechanism

Pruessner

Amarnath

Datta

et al. 2005

J. Microelectromech. Syst.

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An optical waveguide MEMS switch fabricated on an indium phosphide (InP) substrate for operation at 1550 nm wavelength is presented. Compared to other MEMS optical switches, which typically use relatively large mirrors or long end-coupled waveguides, our device uses a parallel switching mechanism. The device utilizes evanescent coupling between two closely-spaced waveguides fabricated side by side. Coupling is controlled by changing the gap and the coupling length between the two waveguides via electrostatic pull-in. This enables both optical switching and variable optical coupling at voltages below 10 V. Channel isolation as high as 47 dB and coupling efficiencies of up to 66% were obtained with switching losses of less than 0.5 dB. We also demonstrate voltage-controlled variable optical coupling over a 17.4 dB dynamic range. The devices are compact with 2 m 2 m core cross section and active area as small as 500 m 5 m. Due to the small travel range of the waveguides, fast operation is obtained with switching times as short as 4 s. Future devices can be scaled down to less than 1 m 1 m waveguide cross-sectional area and device length less than 100 m without significant change in device design.[1372]Index Terms-Directional coupler, indium phosphide (InP), integrated waveguides, optical MEMS switches.

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confidence: 99%

InP-based optical waveguide MEMS switches with evanescent coupling mechanism

Pruessner

Amarnath

Datta

et al. 2005

J. Microelectromech. Syst.

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“…6,7 A simple technique, applied to a bulk crystal silicon sample, was formerly presented in Ref. 8 for room-temperature measurements.…”

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confidence: 99%

Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 K at the wavelength of 1.5 μm

Corte

Cocorullo

Iodice

et al. 2000

Applied Physics Letters

114

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The thermo-optic coefficient ∂n/∂T has been measured from room temperature to 600 K at the wavelength of 1523 nm in three important semiconductors for fiber-optic device fabrication, namely, InP, GaAs, and 6H–SiC. The adopted technique is very simple and is based on the observation of the periodicity of the signal transmitted, at the desired wavelength, by an étalon made of the material under test, when it experiences a temperature variation. The values of ∂n/∂T measured in InP and GaAs at room temperature are in agreement with previously reported ones, but increase with temperature with a weak quadratic dependence. SiC conversely shows a lower thermo-optic coefficient (2.77×10−5 K−1) at 300 K, which, however, doubles for a 300 K temperature increase.

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“…For many common optical materials such as silica lithium niobate, silicon, and other semiconductor crystals such as the III-V binaries ͑InP, GaAs, etc.͒, these coefficients are now described well by the pioneering dispersion model of Ghosh. 3 Experimental verification of thermooptic coefficients, however, requires suitable sample geometries such as a prism 4 or etalon 5 or integrated optical waveguide device, 6 and in part for this reason, there is a scarcity ͑essentially an absence͒ of the reported thermo-optic coefficients of materials of the quaternary III-V compound semiconductors. These alloys are not formed as bulk crystals but as thin epitaxial layers by metal organic vapor phase epitaxy ͑MOVPE͒ growth on the binary alloy crystal wafer substrate.…”

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“…An acceptable value, dn InP / dT = ͑+1.95± 0.05͒ ϫ 10 −4 K −1 , was taken from the average results of a range of published experimental measurements [4][5][6]10 carried out at or near 1.55 m and at 25°C. Two structures were fabricated using 1.3Q material for both guiding layers in one design ͑a͒ and guiding layers of each of 1.3Q and 1.15Q materials in the other ͑b͒ ͑Table I͒.…”

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Universal method to determine the thermo-optic coefficient of optical waveguide layer materials using a dual slab waveguide

Cassidy

Cross

2007

Applied Physics Letters

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A dual slab waveguide device method for determining the thermo-optic coefficient of waveguide layer materials is demonstrated. Temperature change-induced optical path length imbalance between two single slab waveguide modes provides the primary mechanism for detection. The waveguide mode output field phase change differences are encoded in shifts in the far field interference pattern. To illustrate the method, the thermo-optic coefficients of two In1−xGaxAsyP1−y quaternary alloys, 1.3Q and 1.15Q, are measured at a wavelength of 1.55μm and at a center temperature of 25.2°C. Their ratio is in excellent agreement with previous work, in accordance with optical dispersion models.

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Thermal dependence of the refractive index of InP measured with integrated optical demultiplexer

Abstract: Articles you may be interested inErratum: Thermal dependence of the refractive index of InP measured with integrated optical demultiplexer [J.

Cited by 37 publications

References 7 publications

InP-based optical waveguide MEMS switches with evanescent coupling mechanism

InP-based optical waveguide MEMS switches with evanescent coupling mechanism

Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 K at the wavelength of 1.5 μm

Universal method to determine the thermo-optic coefficient of optical waveguide layer materials using a dual slab waveguide

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