Thermal desorption behaviour of adsorbed materials on wafer surfaces

Jimbo, T.; Sakai, S.; Katuyama, K.; Ito, M.; Tomioka, Hiroshi

doi:10.1109/issm.1997.664544

Cited by 10 publications

(6 citation statements)

References 2 publications

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“…In this work, to analyze the mechanism of plasma-assisted oxide-oxide direct bonding with a water dipping process, the water storage properties of CMP-treated PE-CVD SiO 2 surfaces with and without N 2 plasma irradiation were quantitatively measured with an APIMS. APIMS enables us to know the quite small amount of vaporized H 2 O molecules desorbed from wafer surfaces at atmospheric pressure [ 46 ]. Compared with thermal desorption spectroscopy (TDS), APIMS can precisely detect H 2 O concentrations because almost all H 2 O molecules are desorbed from the surface of the wafers prior to measurement at a desired temperature region under the high-vacuum conditions of TDS.…”

Section: Resultsmentioning

confidence: 99%

Oxide-Oxide Thermocompression Direct Bonding Technologies with Capillary Self-Assembly for Multichip-to-Wafer Heterogeneous 3D System Integration

et al. 2016

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Plasma- and water-assisted oxide-oxide thermocompression direct bonding for a self-assembly based multichip-to-wafer (MCtW) 3D integration approach was demonstrated. The bonding yields and bonding strengths of the self-assembled chips obtained by the MCtW direct bonding technology were evaluated. In this study, chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapor deposition (PE-CVD) as a MCtW bonding interface was mainly employed, and in addition, wafer-to-wafer thermocompression direct bonding was also used for comparison. N2 or Ar plasmas were utilized for the surface activation. After plasma activation and the subsequent supplying of water as a self-assembly mediate, the chips with the PE-CVD oxide layer were driven by the liquid surface tension and precisely aligned on the host wafers, and subsequently, they were tightly bonded to the wafers through the MCtW oxide-oxide direct bonding technology. Finally, a mechanism of oxide-oxide direct bonding to support the previous models was discussed using an atmospheric pressure ionization mass spectrometer (APIMS).

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Section: Resultsmentioning

confidence: 99%

Oxide-Oxide Thermocompression Direct Bonding Technologies with Capillary Self-Assembly for Multichip-to-Wafer Heterogeneous 3D System Integration

et al. 2016

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“…Impurities can adsorb at the surface of wafers and affect the properties of subsequently grown layers, as illustrated by the influence of organic contamination on the integrity of gate oxides [2], [3] and on the thickness reproducibility of thin silicon nitride layers [4]. Impurities absorbing in the bulk of layers presenting micropores can alter their properties, as with moisture absorption in low dielectrics [5]- [7], and can cause device reliability problems upon later release [5]- [9].…”

Section: Introductionmentioning

confidence: 99%

“…TDS equipments are generally operated under a high vacuum [5]- [7], where weakly bound contaminants are likely to desorb before the analysis is started, and are not suited for the analysis of wafers processed the higher pressures [10], [11]. Concern about volatile organic contamination originating mainly from polymers [10], [11] has led to the development of atmospheric pressure TDS cells, using ion mobility spectrometry (IMS) [12] or atmospheric pressure ionization mass spectrometry (APIMS) [3] for gas analysis.…”

Section: Introductionmentioning

confidence: 99%

Wafer thermal desorption spectrometry in a rapid thermal processor using atmospheric pressure ionization mass spectrometry

Vereecke

Kondoh

Richardson

et al. 2000

IEEE Trans. Semicond. Manufact.

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This paper demonstrates the possibility of performing thermal desorption spectrometry (TDS) on wafers in an atmospheric pressure rapid thermal processor (RTP). A special gas sampling system is described, which allows the analysis of gas composition inside the RTP chamber with atmospheric pressure ionization mass spectrometry (APIMS). Sampling is controlled with no valve operation and high dilution of the sample gas flow can be achieved while maintaining a short sample transfer time. It is shown how gas flows can be optimized to improve the sensitivity and resolution of TDS spectra. The RTP-APIMS setup was used in a study of H 2 O absorption by low dielectric constant fluorinated silica glass (FSG) films, helping to develop a cap that reduced H 2 O absorption upon storage by a factor of 60. NH 3 is shown to desorb from FSG and SiO 2 films deposited by plasma-enhanced chemical vapor deposition (PECVD), which may be of concern for the reliability of integrated circuits.Index Terms-Atmospheric pressure ionization mass spectrometry (APIMS), flourinated silica glass (FSG), low dielectric constant, rapid thermal processing, thermal desorption spectrometry, thin films.

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“…To date, several investigations of AMC and its effects on device performance have been conducted. Most, however, have only paid attention to the experiments based on intentional contamination on devices [3], [9], [10]. Few studies have considered AMC absorbed from cleanroom air and its practical effects on the characteristics of devices.…”

mentioning

confidence: 99%

The Removal of Airborne Molecular Contamination in Cleanroom Using PTFE and Chemical Filters

Yeh

Hsiao

Lin

et al. 2004

IEEE Trans. Semicond. Manufact.

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Cleanroom contamination and its impact on the performance of devices are beginning to be investigated due to the increasing sensitivity of the semiconductor manufacturing process to airborne molecular contamination (AMC). A clean bench was equipped with different filter modules and then most AMC in the cleanroom and in the clean bench was detected through air-sampling and wafer-sampling experiments. Additionally, the effect of AMC on device performance was examined by electrical characterization. A combination of the NEUROFINE PTFE filter and chemical filters was found to control metal, organic, and inorganic contamination. We believe that the new combination of filters can be used to improve the manufacturing environment of devices, which are being continuously shrunk to the nanometer scale.

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Thermal desorption behaviour of adsorbed materials on wafer surfaces

Cited by 10 publications

References 2 publications

Oxide-Oxide Thermocompression Direct Bonding Technologies with Capillary Self-Assembly for Multichip-to-Wafer Heterogeneous 3D System Integration

Oxide-Oxide Thermocompression Direct Bonding Technologies with Capillary Self-Assembly for Multichip-to-Wafer Heterogeneous 3D System Integration

Wafer thermal desorption spectrometry in a rapid thermal processor using atmospheric pressure ionization mass spectrometry

The Removal of Airborne Molecular Contamination in Cleanroom Using PTFE and Chemical Filters

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