Thermal desorption spectra from cavities in helium-implanted silicon

Cerofolini, G. F.; Corni, Federico; Frabboni, Stefano; Nobili, C.; Ottaviani, G.; Tonini, Rita

doi:10.1103/physrevb.61.10183

Cited by 56 publications

(71 citation statements)

References 25 publications

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“…Differently, the contribution of He in the measured strain can only be attributed to gas-vacancy complexes. 31 Thus, the physical origin of the strain in the as-implanted substrates cannot be assigned to a single type of defect but to a multiple contribution from pressurized gasvacancy complexes, self-interstitials, and hydrogen atoms at the BC and AB positions of the lattice. Determining the particular contribution of each type of defect remains challenging and it certainly evolves upon annealing.…”

Section: ͑2͒mentioning

confidence: 99%

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Reboh

Schaurich

Declémy

et al. 2010

Journal of Applied Physics

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Mechanism of the Smart Cut™ layer transfer in silicon by hydrogen and helium coimplantation in the medium dose range J. Appl. Phys. 97, 083527 (2005) We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and implanted ion depth profiles. The measured strain is examined in the framework of solid mechanics and its physical origin is discussed. The microstructure evolution of the samples subjected to intermediate temperature annealing ͑350°C͒ is elucidated through transmission electron microscopy. Gas-filled cavities in the form of nanocracks and spherical bubbles appear at different relative concentration, size, and depth location, depending on the total fluence. These different microstructure evolutions are connected with the surface exfoliation behavior of samples annealed at high temperature ͑700°C͒, determining the optimal conditions for thick layer transfer. 1.5 m thick Si films are then obtained onto glass substrates.

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Section: ͑2͒mentioning

confidence: 99%

On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies

Reboh

Schaurich

Declémy

et al. 2010

Journal of Applied Physics

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“…7 Since then, cavities have been the subject of a considerable research effort and overviews of cavity formation and evolution in He implanted silicon have recently been published. 8,9 With the constant miniaturization of microelectronic devices, the purity requirements of semiconductors are becoming extremely severe. The density of metallic impurities in the active region of the device must be extremely low ͑ഛ10 10 at.…”

Section: Introductionmentioning

confidence: 99%

Damage accumulation in neon implanted silicon

Oliviero

Peripolli

Amaral

et al. 2006

Journal of Applied Physics

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Damage accumulation in neon-implanted silicon with fluences ranging from 5 ϫ 10 14 to 5 ϫ 10 16 Ne cm −2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions and by transmission electron microscopy in order to quantify and characterize the lattice damage. Wavelength dispersive spectrometry was used to obtain the relative neon content stored in the matrix. Implantation at room temperature leads to the amorphization of the silicon while a high density of nanosized bubbles is observed all along the ion distribution, forming a uniform and continuous layer for implantation temperatures higher than 250°C. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, the samples implanted at temperatures below 250°C present a polycrystalline structure with blisters at the surface while in the other samples coarsening of bubbles occurs and nanocavities are formed together with extended defects identified as ͕311͖ defects. The results are discussed in comparison to the case of helium-implanted silicon and in the light of radiation-enhanced diffusion.

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“…DOI Electron interference at a surface is well-known phenomenon and can be induced by electron scattering at surface defects [1] or by subsurface scattering at interfaces [2]. Interestingly, nanosized reflectors can be formed by aggregated noble-gas nanocavities [3], which have been studied in different metals and semiconductors for their formation and growth [4], and for surface and bulk structural changes [5,6]. However, only recently Ar-filled nanocavities were studied with scanning tunneling microscopy (STM) aiming particularly at the quantum well (QW) states formed between surface and nanocavity [7,8].…”

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confidence: 99%