Thermal diffusivity measurement of small silicon chips

Abstract

The thermal diffusivity kd of silicon between - 50°C and 100°C has been obtained by measuring the phase-shift of a thermal wave between two points on a small sample. The relation between the thermal diffusivity and phase-shift is obtained by solving the heat flow equations. The present results agree closely with those obtained by conventional methods.

Effect of Sr Substitution on Structure and Thermal Diffusivity ofBa1-xSrxTiO3 Ceramic

“…The thermal diffusivity value for pure BaTiO 3 is in good agreement (within the experimental error~4%) with the values reported in the literature (11.8×10 −3 cm 2 sec −1 ) [9] . These results indicate that the Sr substitution gives a significant effect on the thermal properties of Ba 1-x Sr x TiO 3 [4] . This behavior can be explained by the relation between the crystallite size and the thermal conductivity (λ).…”

“…However, measuring the rapidity of the heat propagation through the material is known by thermal diffusivity. It becomes important when it involves with non-steady state heat conduction [3,4] . The photoflash method has been widely used for measuring thermal diffusivity of materials.…”

3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET

“…Thermal conductivity and heat capacity of silicon are important parameters that can significantly influence power device cooling by increasing the thermal capacitive behavior of the silicon die with respect to the heat created on its front side in the active area. The following formulas are used to compute respectively silicon thermal conductivity (K) and heat capacity (C P ) variation with temperature as they are in agreement with silicon thermal properties measurements form literature [4,5]:…”

Measuring the thermal diffusivity of CMOS chips

“…In fact, even the reported values of the thermal diffusivity of pure silicon vary considerably -from 0.758 cm 2 /s to 0.960 cm 2 /s at room temperature -probably due to differences in measurement method [3]. In consequence, D eff can best be determined by measurements on electrothermal filters realized in processed chips [4].…”