Thermal diffusivity sensors for wide-range temperature sensing

Vroonhoven, Caspar van; Makinwa, Kofi A. A.

doi:10.1109/icsens.2008.4716553

Cited by 5 publications

(1 citation statement)

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“…Over the measured temperature range, the master curves can be well approximated by a T n power-law [23]. For the 3.3-μm and 2-μm ETFs, good fits were obtained with n=0.98 and n=0.95, respectively, which agrees well with previous work [12,24]. The additional phase due to the readout can be detected and removed via phase calibration.…”

Section: Resultssupporting

confidence: 82%

Compact Thermal-Diffusivity-Based Temperature Sensors in 40-nm CMOS for SoC Thermal Monitoring

Sonmez

Foti

Makinwa

2017

IEEE J. Solid-State Circuits

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An array of temperature sensors based on the thermal diffusivity (TD) of bulk silicon has been realized in a standard 40-nm CMOS process. In each TD sensor, a highly-digital VCO-based ΣΔ ADC digitizes the temperature-dependent phase-shift of an electro-thermal filter (ETF). A phase calibration scheme is used to cancel the ADC's phase offset. Two types of ETF were realized, one optimized for accuracy and one optimized for resolution. Sensors based on the accuracy-optimized ETF achieved a resolution of 0.36 °C (rms) at 1 kSa/s, and inaccuracies of ±1.4 °C (3σ, uncalibrated) and ±0.75 °C (3σ, room-temperature calibrated) from-40 to 125 °C. Sensors based on the resolution-optimized ETFs achieved an improved resolution of 0.21 °C (rms), and inaccuracies of ±2.3 °C (3σ, uncalibrated) and ±1.05 °C (3σ, room-temperature calibrated). The sensors draw 2.8 mA from supply voltages as low as 0.9 V, and occupy only 1650 μm 2 , making them some of the smallest smart temperature sensors reported to date, and well suited for thermal monitoring applications in systems-on-chip (SoC).

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Section: Resultssupporting

confidence: 82%