Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon

Simoen, Eddy; Claeys, Corneel; Rafi, JM; Ulyashin, A.

doi:10.1016/j.mseb.2006.06.041

Cited by 9 publications

(5 citation statements)

References 23 publications

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“…[7][8][9][10][11][12][13] At the moment, this appears to be the best candidate to explain the current observations. [69][70][71] At this point, it is necessary to note that the hydrogen-related shallow donor centers can be formed also in case of H + ion implantation in Si at room temperature, followed by heat-treatments at ϳ400°C. In particular, it was demonstrated that a counter doping by such donors of initially p-type CZ Si and in some cases p-type FZ Si and formation of regions around the ion-projected range occurs.…”

Section: H438mentioning

confidence: 99%

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Simoen

Huang

et al. 2009

J. Electrochem. Soc.

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The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range of doping concentration and interstitial oxygen content [normalOnormali] by electrical and spectroscopic techniques. The plasma-hydrogenated material has been heat treated for different times in the temperature range of 275–500°C . It is shown that, besides oxygen thermal donors (OTDs), hydrogen-related shallow thermal donors (STDHs) also play a crucial role in the hydrogen-assisted creation of excess carriers. The impact of different factors on the introduction rate of the shallow donors will be discussed, whereby a strong role is played by the doping concentration and type (i.e., the Fermi-level position during the thermal anneal in air). Generally, shallow donor formation is faster in p- compared to n-type Si, which is associated with the different charge state of H. From combined deep-level transient spectroscopy and Fourier transform infrared absorption spectroscopy, it is concluded that the additional free carriers are contributed by both STDH and OTD centers, so that H not only plays a catalytic role but actively takes part in the donor formation, depending on the experimental conditions. Finally, from our data some conclusions can be made regarding the nature of the STDHs, which is still a matter of debate.

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Section: H438mentioning

confidence: 99%

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

Simoen

Huang

et al. 2009

J. Electrochem. Soc.

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“…12 and 14 and in the literature [7][8][9][10][11][12][13]. At the moment, this appears to be the best candidate to explain the current observations [69][70][71].…”

Section: Nature Of Stdh Centersmentioning

confidence: 67%

What do We Know About Hydrogen-Induced Thermal Donors?

Simoen¹,

Huang

Ma³

et al. 2008

ECS Trans.

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The hydrogen-plasma-accelerated formation of shallow thermal donors in silicon has been studied for a wide range of doping density and interstitial oxygen content [Oi] by electrical and spectroscopic techniques. The plasma-hydrogenated material has been heat treated for different times in the temperature range of 275 to 500 oC. It is shown that besides Oxygen Thermal Donors (OTDs) also hydrogen related Shallow Thermal Donors (STDHs) play a crucial role in the hydrogen-assisted creation of excess carriers. The impact of different factors on the introduction rate of the shallow donors will be discussed, whereby a strong role is played by the doping density and type, i.e., the Fermi level position during the thermal anneal in air. Generally, shallow donor formation is faster in p- compared with n-type Si, which is associated with the different charge state of H. From combined Deep Level Transient Spectroscopy (DLTS) and Fourier Transform Infrared (FTIR) absorption spectroscopy it is concluded that the additional free carriers are contributed by both STDH and OTD centers, so that H not only plays a catalytic role but actively takes part in the donor formation, depending on the experimental conditions. Finally, from our data some conclusions can be made regarding the nature of the STDHs, which is still a matter of debate.

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“…Level B shows a high correlation to the implantation temperature and counts for about 3 % (50 °C) to 30 % (150 °C) of the shallow donor concentration. The energy level of E C -100 meV would imply the assignment to an oxygen related thermal donor (OTD) reported in [21,22]. However, the rather low cross section of σ e = 4 x 10 14 cm 2 does not match with the cross section reported in [21].…”

Section: Solid State Phenomena Vol 242mentioning

confidence: 81%

The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature

Jelinek

Laven

Ganagona

et al. 2015

SSP

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– For a conventional proton implantation doping process applied to crystalline silicon comprising proton implantation and subsequent furnace annealing the effect of the substrate temperature set during implantation is examined for temperatures between 50 °C and 200 °C. The formation efficiency of the hydrogen related donors in the maximum of the related doping profiles is shown to linearly increase with the implantation temperature. Regarding the dose rate, a reverted effect is found. The appearing effects are explained by considering the evolution of the initial implantation damage towards a vacancy related precursor species of the hydrogen related donor. Additional information about the implantation temperature dependent defect distribution is gained from Fourier-DLTS results.

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Thermal donor formation in direct-plasma hydrogenated n-type Czochralski silicon

Cited by 9 publications

References 23 publications

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?

What do We Know About Hydrogen-Induced Thermal Donors?

The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature

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