Thermal effects in electron beam lithography

Mulder, E. H.

doi:10.1116/1.584531

Cited by 11 publications

(3 citation statements)

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“…Consistent with the findings of several studies, [10][11][12][13] we hypothesize that, in the former case, the thermal front slightly increases the temperature and thus the sensitivity of the resist. This effect is shown in Figs.…”

Section: Electron Beam Writing Strategiessupporting

confidence: 91%

Fabrication issues for the prototype National Institute of Standards and Technology SRM 2090A scanning electron microscope magnification calibration standard

Newell¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inApplication of scanning probe methods for electronic and magnetic device fabrication, characterization, and testing J.A new National Institute of Standards and Technology scanning electron microscope magnification calibration standard has been fabricated and distributed in production prototype form. The SRM 2090A samples contain structures ranging in pitch from 3000 to 0.2 m and are useful at both highand low-accelerating voltages. The design and fabrication of the samples has incorporated many of the improvements suggested through two previous prototype series. This article discusses optimization of the lithographic techniques in the fabrication process. We used electron beam lithography for fabrication because of the 0.1 m features required on the samples. After liftoff, unexpected linewidth differences were measured among the smallest features. These differences were reduced through modification of the electron beam writing paths. We propose that the resist heating effect caused an axial dependence among features fabricated using the original electron beam writing paths. In addition, the susceptibility of the present prototype design to electron beam proximity effects was analyzed. Proximity effects from the 9 m range of backscattered electrons have little effect on the pitch structures of the prototype but may impact development of the prototype as a linewidth standard.

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Section: Electron Beam Writing Strategiessupporting

confidence: 91%

Fabrication issues for the prototype National Institute of Standards and Technology SRM 2090A scanning electron microscope magnification calibration standard

Newell¹

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…This resist pattern deformation is called a resist heating effect. 1,[3][4][5][6][7][8][9][10][11][12][13][14][15][16] The temperature rise has been experimentally and theoretically investigated. The resist deformation caused by the temperature rise has also been experimentally and theoretically investigated.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study on effects of electron thermal energy on sensitization process of chemically amplified electron beam resists—contribution to resist heating effect in electron beam mask writing

Kozawa

Tamura²

2019

Jpn. J. Appl. Phys.

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The elevation of resist temperature during exposure to electron beam (EB) deforms the patterns of chemically amplified resists. The resist heating effect is a significant problem in mask production using a high-current EB mask writer. However, its mechanism is still unknown. In this study, the effects of electron thermal energy on the sensitization process of chemically amplified EB resists were investigated using simulation on the basis of their sensitization mechanism. The decomposition yield of sensitizers increased with resist temperature. The effect of the increase of decomposition yield on the critical dimension (CD) was calculated on the basis of the reaction mechanism. When the exposure pattern width was set to the same as the half-pitch (16 nm), the values of dCD/dT were 0.019, 0.013 and 0.010 nm K−1 for the sensitizer concentrations of 0.2, 0.3 and 0.4 (molecules) nm−3, respectively. dCD/dT was decreased by decreasing the exposure pattern width.

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“…As the 50keV E-beam exposure machines have been used for several years, heating effect is one of the significant factors causing mask CD errors [1] [2] . Moreover the material of masks is weakened by heating effect.…”

Section: Heat Equationmentioning

confidence: 99%

Simulation of resist heating effect with e-beam lithography using distributed processing (DP)

Ahn

Park

et al. 2005

SPIE Proceedings

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As the design rule with wafer is tightening to sub-100nm, the specification of Mask CD uniformity is steeply tightened too. For instance, according to 2004 ITRS Roadmap updated, the specification of DRAM's CD uniformity requires less then 7nm on 80nm nodes in Yr. 2005 [7] . In order to satisfy that specification, it is important to analyze various factors such as e-beam machine error, heating effect, fogging effect, proximity effect, and process errors which cause CD non-uniformity in the mask. In this paper, a simulation method will be introduced to calculate the local and global heating effect by applying DP(Distributed Processing). First, experiments were performed to see heating effects on mask CD uniformity. In case of the ZEP process with 50KeV exposure, the CD error caused by heating effect amounted to 45nm in worst case. Second, heating effect was simulated using DP. Recently, most simulators have been required high accuracy. However, it is inevitable to spend more calculation time. To improve that problem, DP has been adopted in many softwares. In this paper, MPI(Message Passing Interface) library was applied to simulate heating effect. Finally, the experiment and simulated results were compared. As a result, simulation results could explain the CD errors investigated on our experiment. In our experiment, 2D simulation is sufficient to expect CD errors caused by resist heating effect.

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Thermal effects in electron beam lithography

Cited by 11 publications

References 0 publications

Fabrication issues for the prototype National Institute of Standards and Technology SRM 2090A scanning electron microscope magnification calibration standard

Fabrication issues for the prototype National Institute of Standards and Technology SRM 2090A scanning electron microscope magnification calibration standard

Theoretical study on effects of electron thermal energy on sensitization process of chemically amplified electron beam resists—contribution to resist heating effect in electron beam mask writing

Simulation of resist heating effect with e-beam lithography using distributed processing (DP)

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