Modern semiconductor technologies have advanced to the level of sophistication where the benefits of the high functional and power density,
high speed, low defect rate and low wafer processing cost can seldom be fully utilised at the final
equipment or even at the single packaged semiconductor component level due to the limitations of wire
bonds and lead frame fan‐outs. This paper suggests a new assembly
method where low‐cost contact bumps are deposited on semiconductor wafers and then the
dice are reflow soldered or gang bonded to the substrate. The bumps are electroless nickel deposited
and coated with a protective layer of gold. As the nickel bumps are non‐collapsible, they are
better suited to Extra High Density Interconnections (EHDI) than the more usual solder
bumps. The amount of solder must be accurately dispensed either on the die bumps or on the substrate
bonding pads using various methods. Essential to the high volume assembly is fast
pick‐and‐place operation and simultaneous soldering of all components in a reflow
furnace. In certain applications bonding of the bumped device (one die at a time) can be
done using reflow or thermocompression gang bonding by applying a heated thermode to the backside
of the die. In this case, the bonding energy will be transferred through the die to the bumps. Tentative solder joint strength and reliability aspects are discussed. Further
process and design improvements are suggested.