Thermal emission from large area chemical vapor deposited graphene devices

Luxmoore, I. J.; Adlem, C.; Poole, T.; Lawton, L.M.; Mahlmeister, Nathan H.; Nash, George

doi:10.1063/1.4821939

Cited by 25 publications

(35 citation statements)

References 25 publications

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“…) we have extracted from field effect characteristics measured on similar 3 mm Â 3 mm devices, 16 where CVD graphene was transferred into Si/SiO 2 substrates. However, as no other values of mobility in CVD graphene transferred onto lithium niobate have been reported, the difference in the mobilities could be due to the different properties of the substrates.…”

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confidence: 99%

Temperature dependence of the acoustoelectric current in graphene

Bandhu

Nash

2014

Applied Physics Letters

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The acoustoelectric current in graphene has been investigated as a function of temperature, surface acoustic wave (SAW) intensity, and frequency. At high SAW frequencies, the measured acoustoelectric current decreases with decreasing temperature, but remains positive, which corresponds to the transport of holes, over the whole temperature range studied. The current also exhibits a linear dependence on the SAW intensity, consistent with the interaction between the carriers and SAWs being described by a relatively simple classical relaxation model. At low temperatures and SAW frequencies, the measured acoustoelectric current no longer exhibits a simple linear dependence on the SAW intensity, and the direction of the acoustoelectric current is also observed to reverse under certain experimental conditions.

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confidence: 99%

Temperature dependence of the acoustoelectric current in graphene

Bandhu

Nash

2014

Applied Physics Letters

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“…The effective temperature is predicted to be in the range of 400-800 K in the realistic range of the electric field. [40][41][42][43][44] We note that recent works 27,45 have reported much higher hot-electron temperatures in graphene systems.…”

Section: E Effective Temperaturementioning

confidence: 99%

Nonequilibrium excitations and transport of Dirac electrons in electric-field-driven graphene

Han

2018

Phys. Rev. B

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We investigate nonequilibrium excitations and charge transport in charge-neutral graphene driven with dc electric field by using the nonequilibrium Green's function technique. Due to the vanishing Fermi surface, electrons are subject to non-trivial nonequilibrium excitations such as highly anisotropic momentum distribution of electron-hole pairs, an analog of the Schwinger effect. We show that the electron-hole excitations, initiated by the Landau-Zener tunneling with a superlinear IV relation I ∝ E 3/2 , reaches a steady state dominated by the dissipation due to optical phonons, resulting in a marginally sublinear IV with I ∝ E, in agreement with recent experiments. The linear IV starts to show the sign of current saturation as the graphene is doped away from the Dirac point, and recovers the semi-classical relation for the saturated velocity. We give a detailed discussion on the nonequilibrium charge creation and the relation between the electron-phonon scattering rate and the electric field in the steady-state limit. We explain how the apparent Ohmic IV is recovered near the Dirac point. We propose a mechanism where the peculiar nonequilibrium electron-hole creation can be utilized in an infra-red device.

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“…This confirms that these large area devices retain the characteristic nature of graphene. 8 In contrast to that obtained from the monolayer, the emission from the multilayer device occurs more uniformly over the whole exposed area, consistent with a uniform channel resistance. This behavior is typical of a relatively long conventional filament supported by two colder supports, suggesting that for these purposes the multilayer device can be thought of this way.…”

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confidence: 92%

“…devices, [3][4][5][6][7] and also in large area CVD devices, 8 where the thermal emission is dominated by Joule heating governed by the charge distribution along the channel. In this case given the symmetrical nature and scaling of the emission we estimate the hotspot to be approximately half-way between the source and the drain contacts.…”

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confidence: 99%

Prospective for graphene based thermal mid-infrared light emitting devices

et al. 2014

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We have investigated the spatial and spectral characteristics of mid-infrared thermal emission from large area Chemical Vapor Deposition (CVD) graphene, transferred onto SiO2/Si, and show that the emission is broadly that of a grey-body emitter, with emissivity values of approximately 2% and 6% for mono- and multilayer graphene. For the currents used, which could be sustained for over one hundred hours, the emission peaked at a wavelength of around 4 μm and covered the characteristic absorption of many important gases. A measurable modulation of thermal emission was obtained even when the drive current was modulated at frequencies up to 100 kHz.

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Thermal emission from large area chemical vapor deposited graphene devices

Cited by 25 publications

References 25 publications

Temperature dependence of the acoustoelectric current in graphene

Temperature dependence of the acoustoelectric current in graphene

Nonequilibrium excitations and transport of Dirac electrons in electric-field-driven graphene

Prospective for graphene based thermal mid-infrared light emitting devices

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