Thermal fatigue in silicon power transistors

Lang, G.; Fehder, B.J.; Williams, W. David

doi:10.1109/t-ed.1970.17074

Cited by 48 publications

(9 citation statements)

References 4 publications

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“…deformation is of an exponential dependence of temperature changes. [8] The measured data indicates that as the substrate dimension passes the temperature inflection regions overall multi-pulse power performance is much more significant than gains in single pulse operations. It is due to reduced thermal stress load which shows an exponential relation to the metal deformation.…”

Section: Discussionmentioning

confidence: 97%

Vertical Power Dissipation Characteristics of Semiconductor Power Devices

Chung¹

2007

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's

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email: y A major challenge in the semiconductor power device technology with continuing shrink in feature sizes and its circuit implementation is power density and heat build-up related problems. This paper discusses a significance of vertical power dissipation characteristics of LDMOS devices with investigating electrical and thermal behaviors under single-and multi-power pulse operations in terms of device substrate dimensions.

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Section: Discussionmentioning

confidence: 97%

Vertical Power Dissipation Characteristics of Semiconductor Power Devices

Chung¹

2007

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's

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“…The assemblies are subjected, at low temperature conditions, to elevated thermal stresses and deformations (see, e.g. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]). In the majority of cases it is the stresses that cause reliability problems [23][24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

“…There are two major ways of "converting" a statically determinate bi-material assembly into a statically indeterminate tri-material body. One obvious and a straightforward way is by simply introducing a third, "surrogate", material [6]. An alternative way is by making the bonding material stiff enough in its plane, so that the bonding layer becomes "an equal member/partner" with the two other components of the assembly [32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Bow-free tri-component assembly for aerospace optoelectronics applications: Predicted thermal stresses

Suhir

Béchou

Nicolics

et al. 2015

2015 IEEE Aerospace Conference

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There is an obvious incentive for using bow-free (temperature change insensitive) assemblies in aerospace optoelectronics: elevated bow might lead to the reduction or even to the total loss in the coupling efficiency. A bi-material bi-component assembly cannot be made bow-free: the total bending moment is never zero in such an assembly. To become bow-free, an assembly comprised of dissimilar materials should contain at least three components in order to produce forces that would lead to a zero resultant bending moment. The induced stresses in a bow-free assembly could be, however, high and, if appreciable inelastic stresses occur, the bow-free condition might be compromised. Accordingly, the objective of the present analysis is to obtain a bow-free condition for a tricomponent tri-material assembly and to develop analytical predictive stress models for the evaluation of the interfacial shearing and peeling stresses, as well as for the normal stresses acting in the cross-sections of the assembly components. Analytical (mathematical) modeling enables one to better understand the physics of possible failures and to design a reliable product. The carried out numerical examples have indicated that all the three stress categories could be rather high and on the same order of magnitude. The developed models could be of help in the analysis and design of bow-free opto-electronics assemblies for aerospace applications. The models could be employed in other areas of applied science and engineering, when there is an incentive for using bow-free assemblies and to quantify the induced stresses. The future work should include thorough accelerated testing to establish the allowable level of the induced stresses.

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“…[1][2][3][4][5][6][7][8][9][10][11][12]), including electronic, opto-electronic, and photonic assemblies (see, e.g., Refs. [13][14][15][16][17][18][19]). In some of these assemblies, the functional component (package), i.e., the component contain ing active and/or passive devices and interconnects, is placed (sandwiched) between two identical components (substrates).…”

Section: Introductionmentioning

confidence: 99%

Analysis of a Bow-Free Prestressed Test Specimen

Suhir

Nicolics²

2014

Journal of Applied Mechanics

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Broadening the temperature range in accelerated testing o f electronic products is a typical measure to assure that the product o f interest is sufficiently robust. At the same time, a too broad tem perature range can lead to the shift in the modes and mechanisms o f failure, i.e., result in failures that will not occur in actual opera tion conditions. Application o f mechanical prestressing o f the test specimen could be an effective means fo r narrowing the tempera ture range during accelerated testing and thereby achieving trust worthy and failure-mode-shift-free accelerated test information. Accordingly, simple engineering predictive models are developed for the evaluation o f the magnitude and the distribution o f thermal and mechanical stresses in a prestressed bow-free test specimen. A design, in which an electronic or a photonic package is bonded between two identical substrates, is considered. Such a design is of ten employed in some today's packaging systems, in which the "inner," functional, component containing active and/or passive devices and interconnects is placed between two identical "outer" components (substrates). The addressed stresses include normal stresses acting in the component cross sections and the interfacial shearing and peeling stresses. Although the specimen as a whole remains bow-free, the peeling stresses might be nevertheless appre ciable, since the outer components, if thin enough, deflect to a greater or lesser extent with respect to the inner component. The numerical example has indicated that the maxima o f the interfacial thermal shearing and peeling stresses are indeed comparable and that these maxima are on the same order o f magnitude as the nor mal thermal stresses acting in the components' cross sections. It is shown that since the thermal and the prestressing mechanical loads are o f different physical nature, the stresses caused by these two load categories are distributed differently over the specimen's length. It is shown also that although it is possible and even advisa ble to apply mechanical prestressing fo r a lower temperature range, it is impossible to reproduce the same stress distribution as in the case o f thermal loading. The obtained results enable one to shed light on the physics o f the state o f stress in prestressed bowfree test specimens in electronics and photonics engineering.

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Thermal fatigue in silicon power transistors

Cited by 48 publications

References 4 publications

Vertical Power Dissipation Characteristics of Semiconductor Power Devices

Vertical Power Dissipation Characteristics of Semiconductor Power Devices

Bow-free tri-component assembly for aerospace optoelectronics applications: Predicted thermal stresses

Analysis of a Bow-Free Prestressed Test Specimen

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