Thermal-gradient induced abnormal Ni3Sn4 interfacial growth at cold side in Sn2.5Ag alloys for three-dimensional integrated circuits

Ouyang, Fan-Yi; Jhu, Wei-Cheng; Chang, Tao-Chih

doi:10.1016/j.jallcom.2013.05.088

Cited by 46 publications

(3 citation statements)

References 20 publications

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“…Thermomigration (TM) is one of the simultaneous heat and mass transfer phenomena that occurs in a mixture, as a result of an external temperature gradient imposed across the mixture. Under a certain temperature gradient, TM may occur in solid solder joints 5 6 7 8 . It was found that Cu atoms quickly diffused from Cu UBM into Sn matrix at the hot/chip end of Cu/Sn-3.5Ag/Cu flip chip solder joint under a temperature gradient of 1143 °C/cm at 150 °C 6 .…”

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confidence: 99%

“…It was found that Cu atoms quickly diffused from Cu UBM into Sn matrix at the hot/chip end of Cu/Sn-3.5Ag/Cu flip chip solder joint under a temperature gradient of 1143 °C/cm at 150 °C 6 . Under a temperature gradient of 7308 °C/cm in Sn-2.5Ag micro bumps at 145 °C, Ni atoms were driven to migrate toward the cold end, as evidenced by a faster Ni 3 Sn 4 growth at the cold end and a more apparent Ni consumption at the hot end 8 . Since the interdiffusion of atoms between solder and UBMs markedly affects interfacial reaction, temperature gradient that enhances the directional diffusion of metal atoms and induces the redistribution of elements will significantly influence the growth behavior of interfacial IMC.…”

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confidence: 99%

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Growth kinetics of Cu6Sn5 intermetallic compound at liquid-solid interfaces in Cu/Sn/Cu interconnects under temperature gradient

Zhao

Zhong

Huang

et al. 2015

Sci Rep

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The growth behavior of intermetallic compounds (IMCs) at the liquid-solid interfaces in Cu/Sn/Cu interconnects during reflow at 250 °C and 280 °C on a hot plate was investigated. Being different from the symmetrical growth during isothermal aging, the interfacial IMCs showed clearly asymmetrical growth during reflow, i.e., the growth of Cu6Sn5 IMC at the cold end was significantly enhanced while that of Cu3Sn IMC was hindered especially at the hot end. It was found that the temperature gradient had caused the mass migration of Cu atoms from the hot end toward the cold end, resulting in sufficient Cu atomic flux for interfacial reaction at the cold end while inadequate Cu atomic flux at the hot end. The growth mechanism was considered as reaction/thermomigration-controlled at the cold end and grain boundary diffusion/thermomigration-controlled at the hot end. A growth model was established to explain the growth kinetics of the Cu6Sn5 IMC at both cold and hot ends. The molar heat of transport of Cu atoms in molten Sn was calculated as + 11.12 kJ/mol at 250 °C and + 14.65 kJ/mol at 280 °C. The corresponding driving force of thermomigration in molten Sn was estimated as 4.82 × 10−19 N and 6.80 × 10−19 N.

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confidence: 99%

mentioning

confidence: 99%

Growth kinetics of Cu6Sn5 intermetallic compound at liquid-solid interfaces in Cu/Sn/Cu interconnects under temperature gradient

Zhao

Zhong

Huang

et al. 2015

Sci Rep

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“…Recently, due to the diameter of micro-bumps being lower than 20 µm, the whole micro-bump has mostly been constituted by IMC after reflow [83]. Previous work about the reliability of micro-bumps has focused on the mechanical properties of the IMC [84] and the comparison of the resistance to EM and TM (thermo-migration) of the IMC to Pb-free solder [85,86]. However, there is little research on the damage of the neighboring un-powered micro-bumps prompted by thermal crosstalk.…”

Section: Micro-bump Electromigration and Heat Transfermentioning

confidence: 99%

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.Electronics 2018, 7, 112 2 of 29 wafer was invented by M.G Smith et al. [2], which opposite surfaces were connected ohmically to the degenerately doped portions to be electrically connected along the thru-connection. With further research and exploration, 2.5D/3D integration technology with TSV realized integrated circuits with advantages of high interconnection density, high performance, low power consumption, and low cost [3,4]. In addition, the core is widely considered to be the leading technology in the field of high density packaging in the future and is an effective way to break through Moore's Law [5][6][7]. Figure 1. Silicon interposer through electrical copper coating technology production: (a) The construction of through-silicon via on the wafer; (b) The dry film etchant is stuck on the wafer, then exposed and etched; (c) Hole plating and pad fabrication by electroplating methods; (d) The photoresist removing. Adapted with permission from [27], Copyright Elsevier, 2016.

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The Interfacial Intermetallic and Shear Strength of Ni Nanoparticle‐Decorated Reduced Graphene Oxide Reinforced Sn2.5Ag0.5Cu Lead‐Free Composite Soldering Joints

Huo

Zhang

et al. 2018

Adv Eng Mater

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The Ni nanoparticle‐decorated reduced graphene oxide (Ni‐rGO) reinforced Sn2.5Ag0.5Cu lead‐free composite solder, as well as the interfacial intermetallic (IMC) and the shear strength of soldering joints, are investigated with scanning electron microscopy (SEM), X‐ray diffraction (XRD), and transmission electron microscope (TEM). The results show that Ni‐rGO can be synthesized by the thermal decomposition method, and the adsorption type between Ni atoms and rGO is chemisorption. When the amount of Ni‐rGO addition reaches 0.05 wt%, the high strength and toughening Ni‐rGO reinforced lead‐free composite solder is obtained, with a tensile strength and elongation of 58.0 MPa and 32.3%, respectively. The growth of the interfacial IMC layers is restrained by the addition of Ni‐rGO, and the highly reliable soldering joints are obtained accordingly. When the amount of Ni‐rGO addition reaches 0.05 wt%, the shear strength of the Ni‐rGO reinforced lead‐free composite solder is 28.1 MPa, which is 26.6% higher than that of the plain Sn2.5Ag0.5Cu soldering joints. With the increase in the amount of Ni‐rGO, the fracture pattern is transforme from a ductile‐brittle mixed fracture to a ductile fracture. Additionally, the fracture pathway shifts from a transition zone, consisting of soldering seam and interfacial IMC, to the direction of the soldering seam.

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Thermal-gradient induced abnormal Ni3Sn4 interfacial growth at cold side in Sn2.5Ag alloys for three-dimensional integrated circuits

Cited by 46 publications

References 20 publications

Growth kinetics of Cu6Sn5 intermetallic compound at liquid-solid interfaces in Cu/Sn/Cu interconnects under temperature gradient

Growth kinetics of Cu6Sn5 intermetallic compound at liquid-solid interfaces in Cu/Sn/Cu interconnects under temperature gradient

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

The Interfacial Intermetallic and Shear Strength of Ni Nanoparticle‐Decorated Reduced Graphene Oxide Reinforced Sn2.5Ag0.5Cu Lead‐Free Composite Soldering Joints

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