Thermal hysteresis in the magnetization of the layered III-VI diluted magnetic semiconductor In1−xMnxSe

Abstract

Magnetic properties of single-crystalline In 1−x Mn x Se ͑x = 0.10͒ have been measured. A prominent thermal hysteresis in the magnetization is observed between 90 and 290 K. The magnetization is reversible ͑deviating by only ϳ0.8%͒ from 400 down to ϳ120 K along the upper branch of the hysteresis. In contrast, the lower branch magnetization is irreversible from 5 up to 290 K and deviates by 30% of the 0.010 emu/ g hysteresis splitting at 140 K. Magnetic-field hysteresis loops at 200 K between −7 and +7 T demonstrate that changing the magnetic field does not allow movement between the upper and lower branches of the thermal hysteresis. This magnetic behavior is consistent with a charge-density wave. However, the observed ⌬T = 200 K hysteresis in In 1−x Mn x Se is roughly an order of magnitude larger than other previously reported values of ⌬T.

Nonlinear magnetization behavior near the spin-glass transition in the layered III-VI diluted magnetic semiconductor Ga1−xMnxS

“…16 In this work we present magnetic measurements to expand our understanding of a spin-glass transition in the layered III-VI DMS Ga 1−x Mn x S. 13 Since no other III-VI DMS is currently known to exhibit a spin-glass transition, we continue to study this spin-glass system to help determine where it fits into the rich collection of other known spinglass materials. This work also complements work done on the other III-VI DMS system investigated to date ͑Ga 1−x Mn x S, 1,2 In 1−x Mn x S, 4,5 In 1−x Mn x Se, 6,7 Ga 1−x Mn x Se, 8 and Ga 1−x Fe x Se͒. 9…”

“…Another behavior in the III-VI DMS with no comparable II-VI DMS system 10 is the large thermal hysteresis between 90 and 290 K recently reported in In 1−x Mn x Se. 6,7 While spin-glass transitions are known to exist in a number of systems 10,11 including II-VI DMS such as Zn 1−x Mn x Te, 12 no III-VI DMS has been reported to exhibit a spin-glass transition except for Ga 1−x Mn x S. 13 The III-VI semiconductors GaSe, 8,[14][15][16][17][18][19] InSe, 15,18-24 GaTe, 25 and GaS ͑Refs. 26-28͒ have received considerable interest in the last few years because of their remarkable nonlinear optical properties.…”

“…Only a few III-VI DMS systems have been investigated to date: Ga 1−x Mn x S, 1-3 In 1−x Mn x S, 4,5 In 1−x Mn x Se, 6,7 Ga 1−x Mn x Se, 8 and Ga 1−x Fe x Se. 9 Ga 1−x Mn x S and In 1−x Mn x S are reasonably well understood at this time.…”

Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga1−xFexTe

“…2,6 In this work we present magnetic and x-ray measurements on single-crystalline Ga 1−x Fe x Te. This work complements work done on the other III-VI DMS systems investigated to date (Ga 1−x Mn x S, [14][15][16][17][18] In 1−x Mn x S, 19,20 In 1−x Mn x Se, [21][22][23] Ga 1−x Mn x Se, 24 and Ga 1−x Fe x Se).…”

“…temperature range from 1.8 to 400 K for measurements taken in both 0.1000 and 0.0500 T. In 7 T, the magnetization increases by only 20% as the temperature is decreased from 400 to 1.85 K. In contrast, the sharp cusp shown in Fig. 1(c) is due to the long-range collective interaction of spins resulting in the spin-glass 17,18 transition at 11.2 K in Ga 1−x Mn x S. At higher temperatures, the broad thermal hysteresis [21][22][23] shown in Fig. 1(d) is likely due in part to a long-range collaborative spin-density-wave in In 1−x Mn x Se.…”