Thermal Impedance Meter for Power &lt;sc&gt;mosfet&lt;/sc&gt; and IGBT Transistors

Смирнов, В.И.; Сергеев, В. А.; Gavrikov, A.A.; Shorin, A.M.

doi:10.1109/tpel.2017.2740961

Cited by 21 publications

(7 citation statements)

References 4 publications

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“…In general, the thermal impedance is used to benchmark the dynamic thermal characteristics of IGBTs in the tested converter. The JESD51-14 standard provides a method to extract this thermal metric [20]- [22]. Based on its definition and standard, a widely used testing bench for the thermal impedance characterization of the IGBT devices can be applied in an H-bridge converter [19].…”

Section: A Control Structure and Measurement Circuit For The Testing ...mentioning

confidence: 99%

Separation and Validation of Bond-Wire and Solder Layer Failure Modes in IGBT Modules

Liu

Zhou

Iannuzzo

et al. 2022

IEEE Trans. on Ind. Applicat.

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Section: A Control Structure and Measurement Circuit For The Testing ...mentioning

confidence: 99%

Separation and Validation of Bond-Wire and Solder Layer Failure Modes in IGBT Modules

Liu

Zhou

Iannuzzo

et al. 2022

IEEE Trans. on Ind. Applicat.

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“…Equation (8) shows the relationship between the thermal resistance R and the thermal flux and the temperature rise T. According to the datasheet of the component or the experimental test, the thermal resistance and the thermal flux of each part can be obtained, thereby calculating the temperature T of each point [25], [26].…”

Section: Numerical Calculation Of Calorific Valuementioning

confidence: 99%

The Analysis of Numerical Simulation About Thermal Management on Frequency Converter

Cheng

Xie

et al. 2019

IEEE Access

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For the heat loss of frequency converter in 50KW class medium-frequency electron magnetic induction steam generator system, this study explored a new solution for inverter cooling and waste heat recovery, which solved the problem of coolant temperature rise while replacing the cooling water, meanwhile recovered part of the waste heat for re-production. The heat dissipation of the power device is simulated to analyze the rationality of the heat dissipation system structure, and the thermal resistance equivalent circuit is established to realize the accurate calculation of the temperature at each point in the system. Experimental research under different environmental temperatures, power, and total cooling water conditions has been done to test and verify its function, the findings show that the designed heat dissipation system for the medium frequency induction heating power supply device works well, which makes the temperature of all pivotal devices converge to normal operating temperature range and increases the energy efficiency of the system by about 4%. The proposed cooling scheme is suitable for promotion in heating projects with high power equipment.

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“…To address this variance, Z. Ma et al conducted a comprehensive study on the switching process and switching loss of SiC MOSFETs with resistive loads [19]. In addition, the pulsed drain current (IDM) under pulsed conditions is theoretically calculated in certain datasheets [20,21]. In short, depending on manufacturer's datasheets to select suitable SiC MOSFETs for nsPFA-applications may yield misleading outcomes [19,22].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of SiC MOSFET Key Parameters for Nanosecond Pulsed Field Ablation: Investigating Discrepancies Between Experimental Data and Manufacturer Datasheet Values

Zhu,

Shi,

Guo

et al. 2023

Preprint

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<div>Nanosecond pulsed field ablation (nsPFA) is a promising modality for clinical tissue ablation. The performance of the pulse generator (PG) strongly depends on the switching characteristics of the SiC MOSFET. Currently, many key parameters listed in SiC MOSFET datasheets are determined using double-pulse test circuits with inductive loads, whereas loads in nsPFA-applications are predominantly resistive. This study proposes a test scheme for SiC MOSFETs under nsPFA-like operating conditions. Key parameters to be evaluated are pulsed drain current (IDM), on-resistance (Ron), rise/fall time, turn-on/off delay, and minimum pulse width. The results show significant differences between manufacturer datasheet values and experimental data. For example, one switch under test has an Idm value of 40 A in the datasheet but 153 A in experimental test. This study recommends that custom testing of SiC MOSFETs is essential when designing PGs for nsPFA-applications.</div>

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Thermal Impedance Meter for Power <sc>mosfet</sc> and IGBT Transistors

Cited by 21 publications

References 4 publications

Separation and Validation of Bond-Wire and Solder Layer Failure Modes in IGBT Modules

Separation and Validation of Bond-Wire and Solder Layer Failure Modes in IGBT Modules

The Analysis of Numerical Simulation About Thermal Management on Frequency Converter

Evaluation of SiC MOSFET Key Parameters for Nanosecond Pulsed Field Ablation: Investigating Discrepancies Between Experimental Data and Manufacturer Datasheet Values

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