1999
DOI: 10.1016/s0368-2048(98)00501-5
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Thermal induced transition in the bonding nature of C60 molecules adsorbed on a Si(111)–(7×7) surface

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Cited by 6 publications
(4 citation statements)
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“…This fact implies that the HOMO-LUMO gap of the anchor C60 molecule is smaller than that of the pristine C60 molecule. This consideration is qualitatively consistent with the preceding conclusion that the C60 molecule is covalently bond to the PDA nanowire, because it is known that the HOMO-LUMO gap of a C60 molecule decreases by covalent bonding with surfaces 38,39 or other molecular species, 39 which originates from splitting of HOMO and/or LUMO levels owing to impairing the symmetrical molecular structure.…”
Section: Resultssupporting
confidence: 90%
“…This fact implies that the HOMO-LUMO gap of the anchor C60 molecule is smaller than that of the pristine C60 molecule. This consideration is qualitatively consistent with the preceding conclusion that the C60 molecule is covalently bond to the PDA nanowire, because it is known that the HOMO-LUMO gap of a C60 molecule decreases by covalent bonding with surfaces 38,39 or other molecular species, 39 which originates from splitting of HOMO and/or LUMO levels owing to impairing the symmetrical molecular structure.…”
Section: Resultssupporting
confidence: 90%
“…This assumption is supported by the results obtained when Ta@Si 16 was deposited on a C 60 /Si­(111)­7 × 7 surface. The left and right panels in Figure a, respectively, show wide- and molecular-scale STM images of a C 60 -terminated Si(111)­7 × 7 surface taken after sparsely depositing Ta@Si 16 cations at ∼90 K. In the C 60 -terminated Si(111)­7 × 7 surface, each C 60 molecule (e.g., the dashed green circle in the right panel of Figure a) exhibits internal structures, showing that the rotational motion of the C 60 molecules is forbidden by covalent interactions between the C 60 molecules and the reactive dangling bonds on the Si(111)­7 × 7 surface. , Figure b,c shows histograms of the dot heights measured on the Ta@Si 16 + -deposited C 60 /Si­(111)­7 × 7 surface after thermal annealing at RT and 773 K, respectively. Interestingly, the height distribution of the dots formed on the C 60 /Si­(111)­7 × 7 surface was nearly maintained even after annealing at 773 K.…”
Section: Resultsmentioning
confidence: 99%
“…The bonding nature has been well studied, for example in ref. 28. The electronic structure and the temperature dependence of C 60 molecules adsorbed on a Si(111)-(7Â7) surface has been investigated using photoelectron spectroscopy.…”
Section: Resultsmentioning
confidence: 99%
“…The pair-wise interaction energy (140 meV) is estimated by assuming thermal equilibrium following the method described in ref. 28. In the same reference, the authors discuss the deviation of the estimated pair-wise interaction energy from the value estimated based on the bulk sublimation energy.…”
Section: Resultsmentioning
confidence: 99%