Thermal instability of electron traps in InAs/GaAs quantum dot structures

Kaniewska, M.; Engström, Olof; Kaczmarczyk, Mariusz; Zaremba, G.

doi:10.1007/s10854-008-9703-4

Cited by 1 publication

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“…Together with the possible introduction of contaminating elements, such strain may give rise to crystalline and impurity-related defects which accumulate in the vicinity of the dot plane. [8][9][10][11][12] Also, a thin wetting-layer quantum well (WL) remains beneath QDs after their formation. The coexistence of quantum confined energy levels and defect energy levels in QD structures may cause difficulties in distinguishing between their different origin when using DLTS.…”

Section: Introductionmentioning

confidence: 99%

Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy

Kaniewska

Engström

Kaczmarczyk

2010

Journal of Elec Materi

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The coexistence of quantum confined energy levels and defect energy levels in quantum dot (QD) structures may cause difficulties in distinguishing between their different origin when using deep-level transient spectroscopy (DLTS). Using InAs/GaAs QDs as demonstration vehicles, we present methodologies to obtain such a classification by DLTS. QD-related spectra measured as a function of repetition frequency of electrical pulses, f, or temperature, T, and reverse voltage, V R , are depicted as contour plots on (f, V R ) and (T, V R ) planes, thus reflecting the complex thermal and tunneling emission of electrons from the ground and excited states. Defect-related levels give rise to different contour patterns and undergo modification, exhibiting double-peak structured emission when defects are agglomerated in the vicinity of the QD plane. This effect is interpreted in terms of an interaction between electron states in traps and the confined QD states.

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