Thermal Instability of Poly-Si Gate Al2O3 MOSFETs

Kim, W.S.; Kawahara, T.; Itoh, Hironori; Horiuchi, Hidenori; Muto, Akiyoshi; Maeda, T.; Mitsuhashi, R.; Torii, Kazuyoshi; Kitajima, Hiroshi

doi:10.7567/ssdm.2003.d-8-1

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“…For a given technology, CMOS devices are designed with a specific gate capacitance, which is proportional to the dielectric constant and inversely proportional to the thickness of the gate material as shown in equation (2 Many materials have been suggested that could replace silicon dioxide or silicon oxynitride as a possible gate dielectric. The most common of these are the simple metal oxides such as Ta 2 O 5 [89][90][91][92][93][94][95][96][97][98][99][100][101][102][103], TiO 2 [104][105][106][107][108][109][110], Y 2 O 3 [111][112][113][114][115][116][117], CeO 2 [118][119][120][121], Al 2 O 3 [122][123][124][125][126][127][128][129][130][131][132], ZrO 2…”

Section: Alternative High-k Gate Dielectricsmentioning

confidence: 99%

High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

Lu¹

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Firstly, if I honestly reflect on who I am, how I got here, what I think I might do well, and so forth, I feel deeply indebted to my supervisor, Prof. Zhu Weiguang, for his constant supervision, encouragements, invaluable suggestion, timely assistance and guidance toward the completion of this work. His depth and breadth of knowledge in research inspired me to explore the world. His patience and calm guidance in the hard parts of my research work made me thankful to him. I would like to express my gratitude to Prof. Lu Huibin for his invaluable guidance in the installation and operation of Laser-MBE system, Dr. R. Gopalkrishnan for his systematic training on AES system and provident guidance on this research work, Dr. Chen Xiaofeng for his continuous and precious guidance at each stage of this work, Prof. Chen Yanfeng for his help in TEM observation, and Mr. Chua Tong Sun for his persistent and timely support in the maintenance of Laser-MBE system.

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Section: Alternative High-k Gate Dielectricsmentioning

confidence: 99%

High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

Lu¹

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Thermal Instability of Poly-Si Gate Al2O3 MOSFETs

Cited by 1 publication

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High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

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