Thermal laser attack and high temperature heating on HfO&lt;inf&gt;2&lt;/inf&gt;-based OxRAM cells

Krakovinsky, A.; Bocquet, Marc; Wacquez, R.; Coignus, J.; Portal, J.M.

doi:10.1109/iolts.2017.8046202

Cited by 4 publications

(5 citation statements)

References 7 publications

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“…However, no faults were injected by the different laser tests, although a catastrophic failure was eventually caused when continuous test was applied, destroying the resistive switching behavior of the device. These results are in line with the ones reported in [24], but are different from the ones in [25,26], where, according to the authors, the devices were disturbed in HRS, passing to the LRS after the laser pulse due to a heating effect. The results of the present work can be useful for a better understanding of RRAM devices under the influence of laser attacks.…”

Section: Discussionsupporting

confidence: 82%

“…This behavior was attributed to the charge collection on the corresponding access transistor of the cell, since the RRAMs were reported to be insensitive in a standalone configuration. Another experiment was carried out in single RRAMs [25,26] where the devices were disturbed by laser exposition, performing also transitions from HRS to LRS. In this case, this behavior was justified by temperature increase brought by laser heating.…”

Section: Introductionmentioning

confidence: 99%

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Impact of Laser Attacks on the Switching Behavior of RRAM Devices

et al. 2020

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The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory technologies. However, their suitability for this kind of application, where the integrity of the data is crucial, is still under study. Among the different typology of attacks to recover information of secret data, laser attack is one of the most common due to its simplicity. Some preliminary works have already addressed the influence of laser tests on RRAM devices. Nevertheless, the results are not conclusive since different responses have been reported depending on the circuit under testing and the features of the test. In this paper, we have conducted laser tests on individual RRAM devices. For the set of experiments conducted, the devices did not show faulty behaviors. These results contribute to the characterization of RRAMs and, together with the rest of related works, are expected to pave the way for the development of suitable countermeasures against external attacks.

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Section: Discussionsupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

Impact of Laser Attacks on the Switching Behavior of RRAM Devices

et al. 2020

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“…Some recent works have addressed possible security issues of such emerging NVMs. For instance, the authors of [9] and [10] have studied the effect of active attacks on the Oxide-based Resistive Random Access Memory (OxRRAM). These works showed that OxRRAM cells could be easily attacked by laser injections.…”

Section: B Security Issuementioning

confidence: 99%

Providing Confidentiality and Integrity in Ultra Low Power IoT Devices

Valea

Silva

Flottes

et al. 2019

2019 14th International Conference on Design &Amp; Technology of Integrated Systems in Nanoscale Era (DTIS)

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IoT devices for low power applications often rely on energy harvesting techniques. In these implementations, IoT nodes must be aware of the amount of available energy. When the energy is about to run out, they need to halt and save the context of the CPU, which is restored as soon as the energy is available again. Some of the existing techniques rely on the transfer of the scan chains content to a Non-Volatile Memory (NVM). However, the saved state of the device might be the target of malicious attacks, including tampering and theft of confidential data. One solution is to provide the encryption and the integrity of context data. In this paper, we propose the implementation of an additional module interposed between the CPU and the NVM, which provides both these security features.

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“…Recent works evaluated the thermal effect impact on emerging non-volatile memory induced by a laser irradiation, on the OxRAM technology [12] and on the STT-MRAM memory [13]. This thermal effect is mostly induced by frontside laser injections.…”

Section: ) Thermal Effectmentioning

confidence: 99%

“…Thus, their hardening and robustness is essential. Recently, it has been demonstrated that front-side laser injection may also generate faults on the Back-End of Line (BEoL) of emerging non-volatile memories such as Resistive Random Access Memory (RRAM) [12] or Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) [13]. Thus, it is now mandatory to also detect laser attacks targeting the STT-MRAM.…”

Section: Introductionmentioning

confidence: 99%

Dual Detection of Heating and Photocurrent attacks (DDHP) Sensor using Hybrid CMOS/STT-MRAM

Kharbouche-Harrari¹,

Wacquez²,

Pendina³

et al. 2019

2019 IEEE 25th International Symposium on on-Line Testing and Robust System Design (IOLTS)

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Integrated Circuits (ICs) have to be protected against threatening environmental radiations and malicious perturbations. A large panel of countermeasures has been developed to answer the needs of this challenging field. The Bulk Built-In Current Sensor (BBICS) is a highly reliable solution for the detection of these abnormal transient radiations that could induce a transient current in the Front-End of Line (FEoL). This paper proposes an innovative sensor based on the BBICS associated to the power-efficient emerging non-volatile memory Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM). The goal of this security solution is to detect both possible photoelectrical laser injections and thermal perturbations. Thus, the proposed architecture designated by Dual Detection of Heating and Photocurrent attacks (DDHP) highlights a dual detection efficiency, on the CMOS circuitry and on the Back-End of Line (BEoL) STT-MRAM technology.

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Thermal laser attack and high temperature heating on HfO<inf>2</inf>-based OxRAM cells

Cited by 4 publications

References 7 publications

Impact of Laser Attacks on the Switching Behavior of RRAM Devices

Impact of Laser Attacks on the Switching Behavior of RRAM Devices

Providing Confidentiality and Integrity in Ultra Low Power IoT Devices

Dual Detection of Heating and Photocurrent attacks (DDHP) Sensor using Hybrid CMOS/STT-MRAM

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