2015
DOI: 10.4028/www.scientific.net/msf.821-823.528
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Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices

Abstract: One challenge for volume manufacturing of 4H-SiC devices is the state-of-the-art wafer dicing technology – the mechanical blade dicing which suffers from high tool wear and low feed rates. In this paper we discuss Thermal Laser Separation (TLS) as a novel dicing technology for large scale production of SiC devices. We compare the latest TLS experimental data resulting from fully processed 4H-SiC wafers with results obtained by mechanical dicing technology. Especially typical product relevant features like proc… Show more

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Cited by 15 publications
(6 citation statements)
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“…It would be interesting to expand it from amorphous to crystalline materials where currently microcracks are induced through thermal ablation. [ 25 ]…”
Section: Discussionmentioning
confidence: 99%
“…It would be interesting to expand it from amorphous to crystalline materials where currently microcracks are induced through thermal ablation. [ 25 ]…”
Section: Discussionmentioning
confidence: 99%
“…TLS is a kerf free laser based dicing technology [2]. While performing TLS a crack is guided by controlled thermally induced mechanical stress using a continuous wave laser to locally heat up the SiC along the dicing street.…”
Section: Thermal Laser Separation -Tls-dicing Tmmentioning
confidence: 99%
“…However, this method has low cutting efficiency, high cutting loss, and often results in chipping and unevenness of the cut edges [7]. To solve the cutting problem of SiC, the world's leading semiconductor companies and research institutions [8][9][10] are actively pursuing the development of laser processing technology to replace mechanical cutting. Laser scribing of SiC reduces damage due to thermal effects compared to direct laser dicing of SiC, which is also a favorable method to process SiC.…”
Section: Introductionmentioning
confidence: 99%