Infrared emissivity of tin upon release of a 25 GPa shock into a lithium fluoride window J. Appl. Phys. 110, 103510 (2011) Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells J. Appl. Phys. 110, 103101 (2011) Microstructure, optical property, and electronic band structure of cuprous oxide thin films J. Appl. Phys. 110, 103503 (2011) Suppression of luminescence quenching at the nanometer scale in Gd2O3 doped with Eu3+ or Tb3+: Systematic comparison between nanometric and macroscopic samples of life-time, quantum yield, radiative and nonradiative decay rates J. Appl. Phys. 110, 094317 (2011) Influence of local atomic configuration in AlGdN phosphor thin films on deep ultra-violet luminescence intensity J. Appl. Phys. 110, 093108 (2011) Additional information on J. Appl. Phys. In this work, we report a systematic investigation of upconversion losses and their effects on fluorescence quantum efficiency and fractional thermal loading in Nd 3+ -doped fluoride glasses. The energy transfer upconversion ͑␥ up ͒ parameter, which describes upconversion losses, was experimentally determined using different methods: thermal lens ͑TL͒ technique and steady state luminescence ͑SSL͒ measurements. Additionally, the upconversion parameter was also obtained from energy transfer models and excited state absorption measurements. The results reveal that the microscopic treatment provided by the energy transfer models is similar to the macroscopic ones achieved from the TL and SSL measurements because similar ␥ up parameters were obtained. Besides, the achieved results also point out the migration-assisted energy transfer according to diffusion-limited regime rather than hopping regime as responsible for the upconversion losses in Nd-doped glasses.