Thermal Management of Hotspots Using Diamond Heat Spreader on Si Microcooler for GaN Devices

Han, Yongdian; Lau, Boon Long; Tang, Gongyue; Zhang, Xiaowu

doi:10.1109/tcpmt.2015.2480077

Cited by 36 publications

(11 citation statements)

References 21 publications

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“…The high thermal conductivity of diamond has motivated efforts for integration with various electronic materials for passive reduction of local heating in devices. 1,2 Polycrystalline diamond, which can be grown on diverse substrates using chemical vapor deposition (CVD), is a prospective heat spreading layer due to improvements reported in thermal performance of power transistors. 3,4 However, the 700-800 C growth temperature used for hotfilament (HF) CVD diamond and the large difference in the coefficient of thermal expansion (CTE) between diamond and the substrate produce thermal stresses in both materials.…”

mentioning

confidence: 99%

Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition

Ahmed

Nazari

Hancock

et al. 2018

Applied Physics Letters

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Polycrystalline diamond stripes, with a nominal thickness of $1.5 lm and various widths, were selectively grown on silicon substrates using chemical vapor deposition. Stress measurements using ultraviolet micro-Raman mapping reveal high compressive stress, up to $0.85 GPa, at the center of the diamond stripe, and moderate tensile stress, up to $0.14 GPa, in the substrate close to the interface with the diamond. Compressive stresses on diamond decrease with diminishing stripe widths. The stress map is well-described using finite element simulation incorporating solely thermal expansion effects.

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mentioning

confidence: 99%

Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition

Ahmed

Nazari

Hancock

et al. 2018

Applied Physics Letters

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“…Several studies have shown reduced operating temperatures of GaN devices when using integrated diamond heat spreading technology [7,8,9].…”

Section: Introductionmentioning

confidence: 99%

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Cuenca

Smith

Field

et al. 2021

Carbon

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Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemical vapour deposition (CVD) of diamond directly onto a III-nitride (III-N) heterostructure membrane induces significant thermal stresses. In this work, these thermal stresses are investigated using an analytical approach, a numerical model and experimental validation. The thermal stresses are

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“…Several high-efficiency liquid cooling strategies have been proposed for cooling of individual power devices, such as impinging coolant on the device [17], [18], as well as flowing coolant through microchannels [19]. The latter can result in state-of-the-art heat fluxes, due its large surface area and high heat transfer coefficient [20].…”

Section: Introductionmentioning

confidence: 99%

Efficient Microchannel Cooling of Multiple Power Devices With Compact Flow Distribution for High Power-Density Converters

Erp

Kampitsis

Matioli

2020

IEEE Trans. Power Electron.

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In this work, we describe a new approach for compact and energy-efficient cooling of converters where multiple miniaturized microfluidic cold-plates are attached to transistors providing local heat extraction. The high pressure drop associated with microchannels was minimized by connecting these cold-plates in parallel using a compact 3D-printed flow distribution manifold. We present the modeling, design, fabrication and experimental evaluation of this microfluidic cooling system and provide a design strategy for achieving energy-efficient cooling with minimized pumping power. An integrated cooling system is experimentally demonstrated on a 2.5 kW switched capacitor DC-DC converter, cooling down 20 GaN transistors. A thermal resistance of 0.2 K/W was measured at a flow rate of 1.2 ml/s and a pressure drop of 20 mbar, enabling the cooling of a total of 300 W of losses in the converter using several mW of pumping power, which can be realized with small micropumps. Experimental results show a 10fold increase in power density compared to conventional cooling, potentially up to 30 kW/l. This proposed cooling approach offers a new way of co-engineering the cooling and the electronics together to achieve more compact and efficient power converters.

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Thermal Management of Hotspots Using Diamond Heat Spreader on Si Microcooler for GaN Devices

Cited by 36 publications

References 21 publications

Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition

Ultraviolet micro-Raman stress map of polycrystalline diamond grown selectively on silicon substrates using chemical vapor deposition

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Efficient Microchannel Cooling of Multiple Power Devices With Compact Flow Distribution for High Power-Density Converters

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