Thermal measurements and analysis of AlGaInP/GaInP MQW red LEDs with different chip sizes and substrate thicknesses

Thermal Analysis and Design of AlGaInP-based Light Emitting Diode Arrays

“…The structure and thermal conductivity of each layer are given in Table 1 [11,18,19]. Both the quantum well layer and the DBRs layer have lateral thermal conductivity K L and vertical thermal conductivity K V , and for all other layers, the thermal conductivities are isotropic.…”

“…On one hand, the optical output power will be reduced due to the carrier leakage of the quantum wells as the temperature increases [20]. On the other hand, as the temperature increases, the defects in the material propagate quickly, which increases the non-radiative carrier recombination centers in the emission region and thus makes the internal quantum efficiency lower [11].…”

“…The energy band gap shrinks with temperature rising, and red-shift of the peak wavelength occurs while the energy band gap shrinks, according to the equation E g (T) = hc/λ, where h is Planck constant and c is the speed of light. [11]. The peak wavelength shift method consists of a calibration measurement and a direct current measurement.…”

“…Moreover, some reports have shown that meshing large size chips into multichips is beneficial for the extraction of heat and light [6]. Heat dissipation can also be improved by reducing the substrate thickness or mounting the chip substrate with high thermal conductivity [11]. Recently, we reported a new fabrication method based on the Micro-Opto-Electro-Mechanical Systems (MOEMS) integrated technique that was used to efficiently fabricate micro LED arrays [12][13].…”

Influence of temperature on the performance of high power AlGaInP based red light emitting diode

“…AlGaInP-based LEDs have a broad wavelength spectrum from green to red, and it is used widely as a light source for various applications of displays, traffic signals, signs, and illuminating of general lightings at different ambient temperatures (Lee et al 2011;Kim et al 2013;Lu et al 2009). Recently the internal quantum efficiency for some such LEDs has reached nearly 99 %, but due to the substantial difference of the refractive index between the quaternary epitaxial layers (refractive index ∼3.3 at 635 nm) and air (refractive index ∼1) the external quantum efficiency is still low (Lee et al 2011;Yen et al 2013).…”