Thermal-mismatch-strain relaxation in epitaxial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CaF</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">BaF</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>/<mml:m

Zogg, H.; Blunier, S.; Fach, A.; Maissen, C.; Müller, Paul; Teodoropol, S.; Meyer, V.; Kostorz, G.; Dommann, Alex; Richmond, Thomas G.

doi:10.1103/physrevb.50.10801

Cited by 101 publications

(48 citation statements)

References 21 publications

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“…This rapid decrease implies a quite high dislocation mobility at the elevated growth temperatures, which is consistent with the fact that the lead salts are very easily deformable materials. 9 At the same time, we observe a drastic increase of the 10 K carrier mobilities by two orders of magnitude from 2ϫ10 4 cm 2 /V s to above 2 ϫ10 6 cm 2 /V s for layer thicknesses from 1000 Å to 3 m, respectively, which clearly indicates a strong correlation between carrier mobility and TD density in PbTe epitaxial layers. 7 Although semiconductor substrates like Si or GaAs are essentially dislocation-free, misfit dislocation formation in strained-layer heteroepitaxy always leads to a high density of threading dislocations on the surface due to nucleation and multiplication of dislocations.…”

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confidence: 54%

“…Figure 3 shows the TD density determined by STM and AFM as a function of layer thickness. With in- creasing layer thickness, the TD density rapidly decreases from above 1.5ϫ10 9 cm Ϫ2 for dϭ1000 Å, to a few times 10 6 cm Ϫ2 for layers of several m in thickness, following roughly a power law dependence with a negative exponent of 1.2 ͑dashed line in Fig. 3͒.…”

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confidence: 99%

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Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2 (111) studied by scanning tunneling microscopy

Springholz

Ueta

Frank

et al. 1996

Applied Physics Letters

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Molecular beam epitaxy of PbTe on BaF 2 ͑111͒ is studied using UHV-scanning tunneling microscopy and atomic force microscopy. It is shown that PbTe growth is totally dominated by growth spirals formed around threading dislocations ͑TD͒ that originate from the growth on the 4.2% lattice-mismatched substrate. Due to dislocation annihilation, the TD density rapidly decreases with layer thickness, which results in a dramatic increase of the electron mobilities in the layers.

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confidence: 54%

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confidence: 99%

Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2 (111) studied by scanning tunneling microscopy

Springholz

Ueta

Frank

et al. 1996

Applied Physics Letters

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“…There are experimental evidences that this strain induces a movement of dislocations and produces additional defects in this rather elastically soft compound [60].…”

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confidence: 99%

Absence of nonlocal resistance in microstructures of PbTe quantum wells

Kolwas

Grabecki

Trushkin

et al. 2012

Physica Status Solidi (b)

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We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for epitaxial microstructures of n-type PbSe and PbTe, in which pronounced nonlocal effects and reproducible magnetoresistance oscillations were found. Here we show that these effects are brought about by a quasi-periodic network of threading dislocations adjacent to the BaF 2 substrate, which give rise to a p-type interfacial layer and an associated parasitic parallel conductance. We then present results of transport measurements on microstructures of modulation doped PbTe/(Pb,Eu)Te:Bi heterostructures for which the influence of parasitic parallel conductance is minimized, and for which quantum Hall transport had been observed, on similar samples, previously. These structures are of H-shaped geometry and they are patterned of 12 nm thick strained PbTe quantum wells embedded between Pb 0.92 Eu 0.08 Te barriers. The structures have different lateral sizes corresponding to both diffusive and ballistic electron transport in non-equivalent L valleys. For these structures no nonlocal resistance is detected confirming that PbTe is a trivial insulator. The magnitude of spin Hall angle g is estimated to be smaller than 0.02 for PbTe/PbEuTe microstructures in the diffusive regime.

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“…Below the hc, G is negative and the layer remains pseudomorphic. As h increases, the first ter.m in Eqn ( 19) increases faster than the second term. Matthews and Blakeslee assumed that at h = hc, G = 0.…”

Section: M!sfit Strainmentioning

confidence: 99%

“…We write an expression for the total energy of a sample of linear dimension L (L is large so that end effects are negligible) and equate its derivative (with respect to l/L) to 0 to obtain the minimum energy. It can be seen that this leads to exactly the same equations viz., G = 0 for determining hc" Though Eqn ( 17) is not correct, exactly the same expression for hc is obtained by equating to zero the first derivative of the total energy with G =Bhlfmb.I-E; (19) Values of Pc are not known with any certainty, and different values of this parameter have been used bv different workers.…”

Section: Theorymentioning

confidence: 99%

Structure of ll- VI Lattice Mismatched Epilayers used for Blue-Green Lasers for Underwater Communication

Pinardi¹,

Maes²,

Jain³

et al. 1998

DSJ

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Critical thickness (hc) is calculated for capped and uncapped lattice mismatched II-VI semiconductor epilayers. Both the old equilibrium theory and the improved theory have been used. The calculated values are compared with the experimental data on epilayers of several II-VI semiconductors and alloys. The observed values of hc are larger than the calculated values. However the discrepancy is much smaller than that found in InGaAs/GaAs and GeSilSi layers. Moreover as compared to InGaAs/GaA.s: and GeSilSi layers, the experimental data show a much smaller scatter and can be fitted with one curve. Strain relaxation in layers with thickness h > hc is also calculated. Strain relaxation in ZnSe layers grown on (100) GaAs shows good agreement with the equilibrium theory. In other cases the observed relaxation is sluggish, the residual strain is larger than its calculated value. Thick highly mismatched layers behave differently. The residual strain agrees with theory and dislocations are distributed periodically, A model ~o interpret these observations is suggested. Implications of this study on the stability of 11-VI strained layers are discussed.The emitted radiation depends on the band gap of the semiconductor. III-V semiconductors canno\be used to fabricate light emitting diodes (LEOs) or laser diodes (LOs) for emission of light at shorter wavelengths (in the blue and green regions of the spectrum) because their band gaps are not sufficiently large. Green-Iight sources are needed for underwater communication in defence. Short

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Thermal-mismatch-strain relaxation in epitaxialCaF2,BaF2/

Cited by 101 publications

References 21 publications

Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2 (111) studied by scanning tunneling microscopy

Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2 (111) studied by scanning tunneling microscopy

Absence of nonlocal resistance in microstructures of PbTe quantum wells

Structure of ll- VI Lattice Mismatched Epilayers used for Blue-Green Lasers for Underwater Communication

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