Thermal Model Development for SiC MOSFETs Robustness Analysis under Repetitive Short Circuit Tests

Pulvirenti, Mario; Cavallaro, Daniela; Bentivegna, N.; Cascino, Salvatore; Zanetti, Edoardo; Saggio, M.

doi:10.23919/epe20ecceeurope43536.2020.9215664

Cited by 2 publications

(5 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the past few years, plenty of researchers have focused on SiC DMOSFET's failures in short-circuit faults. Most of them reach an agreement that there are two failure modes in SiC DMOSFET's short-circuit fault: thermal runaway and gate oxide breakdown [7,9,[25][26][27][28][29][30][31][32][33][34][35][36][37]. As for the origin of thermal runaway failure, there are several different explanations.…”

Section: Discussion On the Short-circuit Failure Mechanismmentioning

confidence: 99%

“…On the one hand, some researchers find that the source metal will melt under hightemperature conditions, causing the incapacity of drain and source during fault, which may lead to the failure [32][33][34]. However, lots of experiment results can prove that delayed thermal runaway exists in SiC DMOSFET's short-circuit test [25,29].…”

Section: Discussion On the Short-circuit Failure Mechanismmentioning

confidence: 99%

See 1 more Smart Citation

A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults

Wu,

Li,

Zheng

et al. 2024

Electronics

View full text Add to dashboard Cite

Accurate fault simulation and failure prediction have long been challenges for SiC MOSFETs users. This paper presents a behavior model of Silicon Carbide (SiC) double-implanted MOSFET (DMOSFET), considering thermal-runaway failures in short-circuit and avalanche breakdown faults on the basis of cell-level physical processes. The proposed model can simulate the faults with extremely high accuracy and precisely predict SiC DMOSFET’s short-circuit withstand time and critical avalanche energy. By finite-element simulations, cell-level physical processes of short-circuit and avalanche breakdown faults are clarified. The mechanisms of thermal-runaway failures are deeply discussed with references to existing studies. Based on semiconductor and device physics mechanisms, the proposed model is constructed upon a traditional behavior model of SiC MOSFET with several parallel branches that are proposed to describe the thermal-runaway failures during both faults. The Cauer thermal network model is used for estimating junction temperature within it. The proposed model is constructed in Simulink, and it is validated using short-circuit and unclamped inductive switching (UIS) tests.

show abstract

Section: Discussion On the Short-circuit Failure Mechanismmentioning

confidence: 99%

Section: Discussion On the Short-circuit Failure Mechanismmentioning

confidence: 99%

A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults

Wu,

Li,

Zheng

et al. 2024

Electronics

View full text Add to dashboard Cite

show abstract

“…In order to fully understand the effect of both depolarization methods (V GS and V DS ) a comparative study is presented in Table 2, including results of the same rating device under nominal conditions at V DS = 800 V [15]. As one can see, under nominal conditions the device withstands around T SCWT = 1.62 µs; with a critical FTS mode.…”

Section: Discussionmentioning

confidence: 99%

“…Average key parameters between V DS and V GS depolarization compared to nominal operating conditions [15].…”

Section: Tablementioning

confidence: 99%

“…This paper aims to present different failure mechanisms of a recent, second generation, ST-Microelectronics™ device 1200 V, 75 mΩ, 33 A @T case = 25 • C planar-gate type device, in an automotive-grade 3-lead TO247 case [15], under incremental-pulse short-circuit behavior. The DC testing voltage was at nominal and reduced 600 V operation instead of standard 800 V used in extreme short-circuit assessment.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

VDS and VGS Depolarization Effect on SiC MOSFET Short-Circuit Withstand Capability Considering Partial Safe Failure-Mode

et al. 2021

View full text Add to dashboard Cite

This paper presents a detailed analysis of 1200 V Silicon Carbide (SiC) power MOSFET exhibiting different short-circuit failure mechanisms and improvement in reliability by VDS and VGS depolarization. The device robustness has undergone an incremental pulse under different density decreasing; either drain-source voltage or gate-driver voltage. Unlike silicon device, the SiC MOSFET failure mechanism firstly displays specific gradual gate-cracks mechanism and progressive gate-damage accumulations greater than 4 µs/9 J·cm−2. Secondly, a classical drain-source thermal runaway appears, as for silicon devices, in a time greater than 9 µs. Correlations with short-circuit energy measurements and temperature simulations are investigated. It is shown that the first mechanism is an incremental soft gate-failure-mode which can be easily used to detect and protect the device by a direct feedback on the gate-driver. Furthermore, it is highlighted that this new mechanism can be sufficiently consolidated to avoid the second drain-source mechanism which is a hard-failure-mode. For this purpose, it is proposed to sufficiently depolarize the on-state gate-drive voltage to reduce the chip heating-rate and thus to decouple the failure modes. The device is much more robust with a short-circuit withstand time higher than 10 µs, as in silicon, no risk of thermal runaway and with an acceptable penalty on RDS-ON.

show abstract

Thermal Model Development for SiC MOSFETs Robustness Analysis under Repetitive Short Circuit Tests

Cited by 2 publications

References 13 publications

A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults

A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults

VDS and VGS Depolarization Effect on SiC MOSFET Short-Circuit Withstand Capability Considering Partial Safe Failure-Mode

Contact Info

Product

Resources

About