Thermal modelling and design of dynamically-controlled heater plates for high temperature processing of 300 mm wafers

Woo, Dong Hun; Han, Changwoon; Youn, Byeng D.; Kim, Kyoung Joon

doi:10.1007/s12206-019-0939-0

Cited by 7 publications

(3 citation statements)

References 11 publications

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“…(3) increased manufacturing costs due to complex structure in order to ensure temperature uniformity of the wafer; and (4) relatively low energy efficiency. [7][8][9] To alleviate these disadvantages, we suggest a planar type of heating element. The suggested planar type of heating element is a thin film material whose surface increases in temperature when current flows.…”

Section: Introductionmentioning

confidence: 99%

Planar heating chuck to improve temperature uniformity of plasma processing equipment

Min

Hong

2020

Jpn. J. Appl. Phys.

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Semiconductor fabrication has increasingly demanded improved control of process parameters related to equipment temperature, such as heating and cooling speed and temperature uniformity of the wafer chuck. We perform preliminary thermal-electrical analysis of a heating chuck with a planar heating element, to investigate the feasibility of a planar heating element for plasma-assisted deposition equipment. We propose and optimize circular electrode patterns for the planar heating element of a 6 inch heating chuck design to improve temperature uniformity of the wafer chuck. Using an Analysis System numerical study, we achieve a superior temperature uniformity profile compared to conventional coil-type heating elements.

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Section: Introductionmentioning

confidence: 99%

Planar heating chuck to improve temperature uniformity of plasma processing equipment

Min

Hong

2020

Jpn. J. Appl. Phys.

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“…They reported that the temperature uniformity increases with the electrode diameter, and a maximum temperature difference was observed between the electrode and the wafer edge. Woo et al [16] numerically analyzed heat transfer characteristics of multi-zone heaters considering heating element width and distance between heating elements. The temperature difference of the heater was mitigated by adjusting the distance of the heating element.…”

Section: Introductionmentioning

confidence: 99%

Numerical evaluation on surface temperature uniformity of multi-zone and single-zone ceramic heaters with the electrostatic chuck

Lee

2021

J Mech Sci Technol

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The present study aims to numerically analyze the surface temperature uniformity of the multi-zone/single-zone ceramic heaters because the temperature uniformity becomes important in the semiconductor process, in close association with increasing productivity, depending on the power of heaters and the coolant temperature. The extensive simulations were conducted by the commercial code of ANSYS Fluent (V.2020.R2). It was found that the maximum temperature differences between the center of the puck and edge were estimated to be 32 K and 25 K for the circle and ring-type single-zone heaters, respectively. Also, the temperature difference between the center of the puck and the edge increased with the power of the ceramic heater. When using the multi-zone heater, a temperature difference was predicted to be 4.73 K, showing a smaller variation in space. It is concluded that the multi-zone heater can yield a more uniform temperature field in the radial direction.

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“…With the recent demand for high-performance heaters with good temperature uniformity and rapid heating rates during the deposition process, these issues have become problematic. The poor temperature uniformity problem has been overcome using the multi-zone method, which divides the zones of the heater and differently heats them by area [12].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Planar Heating Chuck Using Nichrome Thin Film as Heating Element for PECVD Equipment

Yoon

Min

et al. 2021

Electronics

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Improving semiconductor equipment and components is an important goal of semiconductor manufacture. Especially during the deposition process, the temperature of the wafer must be precisely controlled to form a uniform thin film. In the conventional plasma-enhanced chemical vapor deposition (PECVD) chuck, heating rate, and temperature uniformity are limited by the spiral pattern and volume of the heating element. To overcome the structural limitation of the heating element of conventional chuck, we tried to develop the planar heating chuck (PHC), a 6-inch PECVD chuck with a planar heating element based on NiCr thin film that would be a good candidate for rapidly and uniformly heating. The time for the temperature elevation from room temperature to 330 °C was 398 s. In a performance evaluation, the fabricated PHC successfully completed a SiO2 PECVD process.

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Thermal modelling and design of dynamically-controlled heater plates for high temperature processing of 300 mm wafers

Cited by 7 publications

References 11 publications

Planar heating chuck to improve temperature uniformity of plasma processing equipment

Planar heating chuck to improve temperature uniformity of plasma processing equipment

Numerical evaluation on surface temperature uniformity of multi-zone and single-zone ceramic heaters with the electrostatic chuck

Fabrication of Planar Heating Chuck Using Nichrome Thin Film as Heating Element for PECVD Equipment

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