Thermal Modification of Microstructures and Grain Boundaries in Silicon Carbide

Zhang, Xiao Feng; Jonghe, Lutgard C. De

doi:10.1557/jmr.2003.0391

Cited by 6 publications

(4 citation statements)

References 36 publications

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“…The resulting indent crack sizes performed after heat treatments show a large change with respect to the values of indents before heat treatment. 2(b) for a sample quenched in air from 1173 K. Other groups have reported the formation of nanoprecipitates and second phase particles in heat-treated SiC [8], which is consistent with our findings. Figure 2(a) shows the change in fracture toughness as a function of temperature.…”

Section: Package Bodysupporting

confidence: 92%

Extreme Service Packaging for Silicon Carbide Electronic Devices

et al. 2004

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Electronic devices based on single crystal SiC represent a good choice for a variety of new high temperature, high power electronics applications. The challenge is to develop a package that is resistant to thermal degradation in harsh environments. Conditions are extreme and this all but rules out only a handful of materials and materials systems. Polycrystalline SiC is the material that we have chosen to study as a suitable package and materials suitability/compatibility has been considered on several levels.

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Section: Package Bodysupporting

confidence: 92%

Extreme Service Packaging for Silicon Carbide Electronic Devices

et al. 2004

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“…Work in sintered SiC particles indicate that amorphous regions do occur at grain boundaries. 16,17 It is also well known that SiC substrates are often defective and that the existence of many of these defects are thought to be traceable to the presence of grain boundaries. 18…”

Section: Discussionmentioning

confidence: 99%

Planar defects in 4H-SiC PiN diodes

Twigg

Stahlbush

Irvine

et al. 2005

Journal of Elec Materi

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Using plan-view transmission electron microscopy (PVTEM), we have identified stacking faults (SFs) and planar defects in 4H-SiC PiN diodes subjected to electrical bias. Our observations suggest that not all planar defects seen in the PiN diodes are SFs. By performing diffraction-contrast imaging experiments using TEM, we can distinguish SFs from other planar defects. In addition, high-resolution TEM (HRTEM) imaging and analytical TEM have revealed that some planar defects consist of a 3-nm-wide SiC amorphous layer. Many of these planar defects are orientated parallel to {11 -00} planes, whereas others are roughly parallel to the (0001) plane. The appearance of these planar defects suggests that they are grain boundaries.

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“…An assembled tip of the heating specimen holder is shown in Figure a‐ III . With the development of high temperature‐resistant materials, the working temperature could reach more than 1500 °C . Recently, Pérez et al.…”

Section: Construction Of In‐situ Temmentioning

confidence: 99%

“…[47] With the development of high temperature-resistant materials, the working temperature could reach more than 1500°C. [48][49][50] Recently, Pérez et al reported a newly-designed micro-heating system with ultra temporal-stability, which kept the heating sample at constant z-position (no bulging) up to 700°C and allowed EDX acquisition in the TEM up to 1000°C. [16,51] With the help of precision machining technology and MEMS technology, a special holder equipped with a nanoreactor can be manufactured for in-situ TEM study, which allows gases to be introduced and sealed within the reactor (illustrated in Figure 2c).…”

Section: Specimen Holdermentioning

confidence: 99%

In‐situ Transmission Electron Microscope Techniques for Heterogeneous Catalysis

Zhang

Liu

et al. 2020

ChemCatChem

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The physicochemical properties of heterogeneous catalysts in static or inert environments often deviate greatly from the properties under in‐situ or working conditions. To gain an insightful understanding of realistic catalyst properties and the corresponding catalytic mechanisms, it is essential to identify and rationalize changes in catalysts under reaction conditions. In recent years, in‐situ transmission electron microscope (in‐situ TEM) techniques have been increasingly developed, offering a unique approach to visualize the evolution of heterogeneous catalysis with ultra‐high spatial resolution, good energy resolution and reasonable temporal resolution under controllable or even realistic catalytic conditions. In this review, we have summarized recent advances in the in‐situ TEM analysis of heterogeneous catalysis, which suggests the great potential of this technique in this important field. Furthermore, technical challenges and possible solutions are discussed.

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Thermal Modification of Microstructures and Grain Boundaries in Silicon Carbide

Cited by 6 publications

References 36 publications

Extreme Service Packaging for Silicon Carbide Electronic Devices

Extreme Service Packaging for Silicon Carbide Electronic Devices

Planar defects in 4H-SiC PiN diodes

In‐situ Transmission Electron Microscope Techniques for Heterogeneous Catalysis

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