2022
DOI: 10.1140/epjp/s13360-022-02523-y
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Thermal neutron conversion by high purity 10B-enriched layers: PLD-growth, thickness-dependence and neutron-detection performances

Abstract: Neutron applications and detection are of paramount importance in industry, medicine, scientific research, homeland security, production of extreme UV optics and so on. Neutron detection requires a converter element that, as a result of its interaction with neutrons, produces reaction products (mainly charged particles) whose detection can be correlated with the neutron flux. Reduced availability and increased cost of the most used converter element, 3He, have triggered research efforts for alternative materia… Show more

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Cited by 5 publications
(13 citation statements)
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“…The film was coupled with a Silicon solid-state detector and exposed to a neutron flux emitted by an Am-Be neutron source at a rate of 2.2 × 10 6 s −1 . The results from both experimental measurements and simulations conducted using the GEANT4 toolkit showed excellent agreement, indicating a neutron detection efficiency of approximately 2% [35].…”
Section: Introductionmentioning
confidence: 76%
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“…The film was coupled with a Silicon solid-state detector and exposed to a neutron flux emitted by an Am-Be neutron source at a rate of 2.2 × 10 6 s −1 . The results from both experimental measurements and simulations conducted using the GEANT4 toolkit showed excellent agreement, indicating a neutron detection efficiency of approximately 2% [35].…”
Section: Introductionmentioning
confidence: 76%
“…The process resulted in a uniform 10 B film with a thickness of 1 µm on the On top of this 10 B film, a 1 µm layer of CsPbBr 3 perovskite was deposited. In previous research [35], the compositional, structural, and morphological characterization of the 10 B film has already been conducted. In the present work, a comprehensive characterization of the perovskite film is performed using RBS spectroscopy, SEM, and XRD techniques.…”
Section: Discussionmentioning
confidence: 99%
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“…157 Gd ≈254,000 too many gammas (and toxic) [26,27] 113 Cd ≈20,000 too many gammas (and toxic) [28,29] 3 He 5333 expensive, being replaced in neutron detection applications, non-natural, produced in military reactors [30] 10 B 3837 expensive, produces low energy alpha and 7 Li particles but also gamma rays [31][32][33] 6 Li 940 cheaper, easily deposited ( 6 LiF), produces high-energy triton and alpha particles and no gamma rays [33,34] 235 U ≈583 dangerous strategic material, radioactive, subject to radiation protection restrictions [33] According to the long standing SiLiF technique [20][21][22][23][24][25], a 6 LiF layer of 4300 µg/cm 2 areal density (≈17 µm thickness at nominal density), enriched at 95% in 6 Li, was deposited onto a glass substrate by means of a reasonably simple chemical procedure [34]. As for the silicon diode, an off-the-shelf PIN photodiode of 1 cm 2 area and 300 µm thickness was chosen, namely the unsealed S3590-09 [35] produced by Hamamatsu Photonics, Hamamatsu, Japan, costing about EUR 100, which has no transparent resin window in front, so that the particles can reach the depleted junction region.…”
Section: Species Cross Section [B] Commentmentioning
confidence: 99%