Thermal oxidation of cleft surface of InSe single crystal

Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours

“…The obtaining of In 2 Se 3 compound as a result of TA of both the InSe single crystals and thin films, in vacuum or in normal atmosphere, was described in papers . There are known five phases of In 2 Se 3 compound ( α , β , γ , δ and κ ) with different properties.…”

Thermal oxidation of indium and gallium sulphides

“…The wide luminescence band with maximum at $1.8 eV consists of two simple bands [2,8] and is connected with recombination through anionic lattice defects in In 2 O 3 . This band is characteristic for both single and polycrystalline indium oxide [8,9].…”

“…In the case of III-VI compounds, this technique is not very reliable due to the complexity of the sequence of intermediate phases. For example, oxidation of indium and gallium selenides leads to precipitation at the interface boundary both selenates and selenides of the corresponding metals with the higher selenium content [1][2][3][4]. In fact, till now not much attention has been given to the oxidation behaviour of isotypical indium and gallium monosulphides.…”

Thermal stability and oxidation of layer-structured rhombohedral In3Se4 nanostructures

“…13 On the other hand, oxidation can also be used to tune the photoelectric property of materials 14 and to intentionally design metal oxides with specific morphology. [15][16][17][18][19][20][21][22][23] Understanding the oxidation behaviour can then extend the routes in preserving materials' structural integrity under elevated temperatures.…”

“…27 Many investigations have been carried out to understand the thermal stability and oxidation behaviour of various bulk indium selenides. 15,16,20,21,[29][30][31][32][33][34] In contrast, however, there are very limited investigations on the thermal stability and oxidation of indium selenide nanostructures. For example, j-In 2 Se 3 nanowires were revealed to be stable up to 500 C by in-situ synchrotron X-ray diffraction (XRD).…”