Thermal Oxidation of Silicon Carbide (SiC) – Experimentally Observed Facts

Gupta, Sanjeev Kumar; Akhtar, Jamil

doi:10.5772/20465

Cited by 9 publications

(5 citation statements)

References 19 publications

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“…2) originates from the chemical bond switching between Si-O and C-O bonds: Such switching would be rate-limiting on the Si-face. The calculated energy barrier on the Si-face is close to the activation energy (2.4 eV) estimated using the Deal-Grove model 19) and that measured from the grazing incidence X-ray reflectivity (∼3 eV). 28) However, effects of rapid initial oxidation, which is sometimes necessary for estimating the activation energy accurately, are not included in calculating the activation energy using the Deal-Grove model.…”

Section: Oxidantsupporting

confidence: 79%

“…Indeed, this conclusion is qualitatively consistent with the experimental observation of the oxidation rate. 19) We note that this scenario is not applicable for dry oxidation since O 2 molecules react with the SiC substrate regardless of the orientation of the SiC substrate. 33) Furthermore, it should be noted that, on the C-and Si-face, the reaction processes during wet oxidation are different from those of dry oxidation: For both Si-and C-face interfaces, CO molecules are preferentially formed in the oxide region when O 2 molecules are incorporated into SiC.…”

Section: Orientation Dependence During Wet Oxidation Processesmentioning

confidence: 98%

“…28) However, effects of rapid initial oxidation, which is sometimes necessary for estimating the activation energy accurately, are not included in calculating the activation energy using the Deal-Grove model. 19) A more elaborate evaluation of experimental data should be necessary to check the validity of the calculated energy barriers.…”

Section: Oxidantmentioning

confidence: 99%

“…Although we have to carefully examine the validity of the Deal-Grove model to compare the calculated energy barrier with the experimentally obtained activation energy, the calculated energy barrier (∼2.2 eV) of a single H 2 O molecule on the C-face is close to the activation energy (2.13 eV) estimated using the Deal-Grove model. 19) The geometries along the most plausible pathway, which has the lowest energy barrier to form Si-O-Si and C-CH 2 -O-Si bonds from a single H 2 O molecule, are shown in Fig. 3, and the energy variation as a function of distance along the reaction coordinate obtained by the NEB method is shown in Fig.…”

Section: Oxidantmentioning

confidence: 99%

“…31,32) Furthermore, it has been recently reported that the activation energies estimated from the growth rate of wet SiC oxidation are 2.38-3 and 2.13 eV on the Si-and C-face of SiC, respectively. 19,28) The difference in near-interface strain in SiO 2 between dry (O 2 ) and wet oxidations has also been discussed on the basis of the results of the Fourier transform infrared spectroscopy 27) and X-ray diffraction. 29) However, the effects of wet oxidation on physical structures and oxidation mechanisms have been rarely studied from theoretical viewpoints.…”

Section: Introductionmentioning

confidence: 99%

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Reaction mechanisms at 4H-SiC/SiO₂interface during wet SiC oxidation

Akiyama

Hori

Nakamura

et al. 2018

Jpn. J. Appl. Phys.

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The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO 2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO 2 interfaces with various orientations demonstrate characteristic features of the reaction depending on the crystal orientation of SiC: On the Si-face, the H 2 O molecule is stable in SiO 2 and hardly reacts with the SiC substrate, while the O atom of H 2 O can form Si-O bonds at the C-face interface. Two OH groups are found to be at least necessary for forming new Si-O bonds at the Si-face interface, indicating that the oxidation rate on the Si-face is very low compared with that on the C-face. On the other hand, both the H 2 O molecule and the OH group are incorporated into the C-face interface, and the energy barrier for OH is similar to that for H 2 O. By comparing the calculated energy barriers for these reactants with the activation energies of oxide growth rate, we suggest the orientation-dependent rate-limiting processes during wet SiC oxidation.

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Section: Oxidantsupporting

confidence: 79%

Section: Orientation Dependence During Wet Oxidation Processesmentioning

confidence: 98%

Section: Oxidantmentioning

confidence: 99%

Section: Oxidantmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Reaction mechanisms at 4H-SiC/SiO₂interface during wet SiC oxidation

Akiyama

Hori

Nakamura

et al. 2018

Jpn. J. Appl. Phys.

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ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation

Šimonka¹,

Hössinger

Weinbub³

et al. 2017

J. Phys. Chem. A

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We analyze the early stage of the highly anisotropic silicon carbide oxidation behavior with reactive force field molecular dynamics simulations. The oxidation of a-, C,- m-, and Si-crystallographic faces is studied at typical industry-focused temperatures in the range from 900 to 1200 °C based on the time evolution of the oxidation mechanism. The oxide thicknesses and the growth rates are obtained from these simulation results. In addition, an investigation of the silicon and carbon emission is performed with respect to various orientations in order to support further development of macroscopic physical models that aim to predict initial silicon carbide oxidation.

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The extraction of gate oxide thickness on silicon carbide wide-bandgap material using thermal oxidation based regression techniques for high-power applications

Hashim,

Poobalan,

Zakaria

et al. 2024

AIP Conference Proceedings

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Thermal Oxidation of Silicon Carbide (SiC) – Experimentally Observed Facts

Cited by 9 publications

References 19 publications

Reaction mechanisms at 4H-SiC/SiO₂interface during wet SiC oxidation

Reaction mechanisms at 4H-SiC/SiO₂interface during wet SiC oxidation

ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation

The extraction of gate oxide thickness on silicon carbide wide-bandgap material using thermal oxidation based regression techniques for high-power applications

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Thermal Oxidation of Silicon Carbide (SiC) – Experimentally Observed Facts

Cited by 9 publications

References 19 publications

Reaction mechanisms at 4H-SiC/SiO2interface during wet SiC oxidation

Reaction mechanisms at 4H-SiC/SiO2interface during wet SiC oxidation

ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation

The extraction of gate oxide thickness on silicon carbide wide-bandgap material using thermal oxidation based regression techniques for high-power applications

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Product

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Reaction mechanisms at 4H-SiC/SiO₂interface during wet SiC oxidation

Reaction mechanisms at 4H-SiC/SiO₂interface during wet SiC oxidation