Thermal oxidation of single crystal aluminum nitride — A high resolution transmission electron microscopy study

Chaudhuri, J.; Lee, R.G.; Nyakiti, Luke O.; Gu, Zheng; Edgar, James H.; Li, P.

doi:10.1016/j.matlet.2007.12.023

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“…At the position of 200 nm, the nitrogen content is less than 10%; the oxygen content is more than 41%. These results are consistent with other works [25,26]. Based on the EDS line scan profile, the film is divided into three layers, including AlN, AlO x N y and Al x O y .…”

Section: Resultssupporting

confidence: 92%

Thermal stability of AlN films prepared by ion beam assisted deposition

Meng

Liu

et al. 2015

Applied Surface Science

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Section: Resultssupporting

confidence: 92%

Thermal stability of AlN films prepared by ion beam assisted deposition

Meng

Liu

et al. 2015

Applied Surface Science

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Polarity determination of rough and smooth surface grains in AlN crystals

Nyakiti

Lee

et al. 2012

Cryst. Res. Technol.

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The polarity of rough and smooth grains in textured aluminum nitride boules were analyzed by transmission electron microscopy. Specifically, convergent beam electron diffraction method was applied to determine polarity. The grains corresponding to smooth and rough surfaces were identified as having Al and N polarities, respectively. Aluminum oxide (Al2O3) was observed to form at the grain boundaries. The oxide may precipitate due to the low mutual solubility between Al2O3 and AlN at the high crystal growth temperature (∼2000°C). Oxygen may be the cause of polarity inversion that leads to the formation of Al and N polar grains.

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